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P-Channel MOSFETs

By Vishay/Siliconix 1187

P-Channel MOSFETs

The Vishay Siliconix p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs; down to half of the industry's previous best.

  • Lowest on-resistance per area enables the smallest PCBs
  • Lower voltage drops increase efficiency and battery run time
  • Dual devices offer the potential for a reduced component count in typical battery charger designs

    • With a variety of package sizes and on-resistance ratings, the Vishay p-channel TrenchFET GEN III and IV MOSFETs accommodates a wide range of applications. Moreover, the low on-resistance enables low conduction losses to save power and extend battery usage per charge.

    Resources: P-Channel MOSFETs in a Nutshell

    Features
    • Lowest on-resistance per area achieved for a p-channel MOSFET; down to half of the industry's previous best
    • Down to below 2 mΩ in SO-8 footprint area
    • Low conduction losses save power in battery operated systems
    • Variety of package sizes, from PowerPAK® SO-8 down to 1.6 mm x 1.6 mm PowerPAK SC-75 and 0.8 mm x 0.8 mm chip scale MICRO FOOT®
    Applications
    • Battery powered equipment
    • Notebooks/tablets
    • Game consoles
    • Consumer electronics
    • Wearables

    Nuovi Prodotti:

    SI7111EDN-T1-GE3SI8823EDB-T2-E1SIA469DJ-T1-GE3SI4435FDY-T1-GE3SI3473DDV-T1-GE3

    tag:

    Power ManagementSemiconductors & Dev ToolsVishay/Siliconix

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