Silicon Carbide Transistor

By GeneSiC Semiconductor 272

Silicon Carbide Transistor

GeneSiC Semiconductor introduces their Normally OFF Silicon Carbide Super Junction Transistors. The advantages of using this product include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability. At 1700 V options include 4 A at 500 mΩ RDS(on) or 8 A at 250 mΩ RDS(on). These products are RoHS compliant and come in a TO-247AB package.

  • 170°C maximum operating temperature
  • Temperature-independent switching performance
  • Gate-oxide-free SiC switch
  • Suitable for connecting an anti-parallel diode
  • Positive temperature coefficient for easy paralleling
  • Low gate charge
  • Low intrinsic capacitance
  • Aerospace and defense applications
  • Down-hole oil drilling, geothermal instrumentation
  • Hybrid Electric Vehicles (HEV)
  • Solar inverters
  • Switched-Mode Power Supply (SMPS)
  • Power Factor Correction (PFC)
  • Induction heating
  • Uninterruptible Power Supply (UPS)
  • Motor drives

Nuovi Prodotti: