 | | | |
| PartNumber | SI2312BDS-T1-E3 | SI2309DS-T1-E3 | SI2311DS-T1-E3 |
| Description | MOSFET N-Channel 20V 3.9A | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 31 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | 1.45 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.6 mm | 1.6 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SI2312BDS-E3 | SI2309DS-E3 | SI2311DS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2312BDS-T1-E3 | MOSFET N-Channel 20V 3.9A | |
| SI2312CDS-T1-GE3 | MOSFET 20V Vds 8V Vgs SOT-23 | ||
| SI2312BDS-T1-GE3 | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V | ||
| SI2309DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | ||
| SI2311DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3 | ||
Micro Commercial Components (MCC) |
SI2310-TP | MOSFET N-Channel MOSFET, SOT-23 package | |
| SI2312-TP | MOSFET N-Channel MOSFET, SOT-23 package | ||
| SI2312A-TP | MOSFET N-Ch Enh FET 20Vds 5.0A 8Vgs 0.35W | ||
| SI2310-TP | N-Channel Enhancement Mode Field Effect Transisto | ||
Vishay |
SI2309DS-T1-E3 | MOSFET P-CH 60V 1.25A SOT23-3 | |
| SI2311DS-T1-E3 | MOSFET P-CH 8V 3A SOT23 | ||
| SI2311DS-T1-GE3 | MOSFET P-CH 8V 3A SOT23 | ||
| SI2312BDS-T1-E3 | MOSFET N-CH 20V 3.9A SOT23-3 | ||
| SI2312BDS-T1-GE3 | MOSFET N-CH 20V 3.9A SOT23-3 | ||
| SI2312CDS-T1-GE3 | MOSFET N-CH 20V 6A SOT-23 | ||
| SI2309DS-T1-GE3 | P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs | ||
| SI2309DS-TI | Nuovo e originale | ||
| SI2309DS-TI-E3 | Nuovo e originale | ||
| SI2309DST1 | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | ||
| SI2310 MS10 | Nuovo e originale | ||
| SI2310DS | Nuovo e originale | ||
| SI2310DS-T1-E3 | Nuovo e originale | ||
| SI2311DS-T1 | Nuovo e originale | ||
| SI2312-DS-T1/C2T0D | Nuovo e originale | ||
| SI2312BD | Nuovo e originale | ||
| SI2312BDS | Nuovo e originale | ||
| SI2312CDS | Nuovo e originale | ||
| SI2312CDS-T1-E3 | Nuovo e originale | ||
| SI2312CDS-T1-GE3(P5) | Nuovo e originale | ||
| SI2312DS-T1-E3 | MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage | ||
| SI2312DS-T1-GE3 | Nuovo e originale | ||
| SI2312DS-T1/C2T0D | Nuovo e originale | ||
| SI2313BDS-T1-GE3 | Nuovo e originale | ||
| SI2313DS-T1-E3 | Nuovo e originale | ||
| SI2313DS-T1-GE3 | Nuovo e originale | ||
| SI2314 AE9T | Nuovo e originale | ||
| SI2312BDS-T1-E3-CUT TAPE | Nuovo e originale | ||
| SI2312BDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
| SI2312CDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
| SI2310 | Nuovo e originale | ||
| SI2310DHI | Nuovo e originale | ||
| SI2311DS | Nuovo e originale | ||
| SI2312 | Nuovo e originale | ||
| SI2312DS | Nuovo e originale | ||
| SI2312DS-T1 | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 | ||
| SI2313 | Nuovo e originale | ||
| SI2313DS | Nuovo e originale | ||
| SI2313DS-T1 | Nuovo e originale | ||
| SI2314 | Nuovo e originale | ||
| SI2314 A09T | Nuovo e originale |