SI2309DS-T1-E3

SI2309DS-T1-E3
Mfr. #:
SI2309DS-T1-E3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2309DS-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2309DS-T1-E3 DatasheetSI2309DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
1.45 mm
Lunghezza:
2.9 mm
Serie:
SI2
Larghezza:
1.6 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SI2309DS-E3
Unità di peso:
0.000282 oz
Tags
SI2309DS-T1, SI2309DS-T, SI2309D, SI2309, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.25A; On Resistance, Rds(on):0.55ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-23 ;RoHS Compliant: Yes
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
Parte # Mfg. Descrizione Azione Prezzo
SI2309DS-T1-E3
DISTI # SI2309DS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2309DS-T1-E3
    DISTI # SI2309DS-T1-E3CT-ND
    Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI2309DS-T1-E3
      DISTI # SI2309DS-T1-E3DKR-ND
      Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI2309DS-T1-E3
        DISTI # 70026067
        Vishay SiliconixMOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
        RoHS: Compliant
        0
        • 1:$0.6200
        • 100:$0.5900
        • 250:$0.5600
        • 500:$0.5300
        • 1000:$0.5100
        SI2309DS-T1-E3
        DISTI # 781-SI2309DS-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
        RoHS: Compliant
        0
          SI2309DS-T1
          DISTI # 781-SI2309DS
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
          RoHS: Not compliant
          0
            Immagine Parte # Descrizione
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS-1190

            MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS , M1MA151KT2

            Mfr.#: SI2309DS , M1MA151KT2

            OMO.#: OMO-SI2309DS-M1MA151KT2-1190

            Nuovo e originale
            SI2309DS-T1

            Mfr.#: SI2309DS-T1

            OMO.#: OMO-SI2309DS-T1-1190

            MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3-VISHAY

            MOSFET P-CH 60V 1.25A SOT23-3
            SI2309DS-T1-GE3

            Mfr.#: SI2309DS-T1-GE3

            OMO.#: OMO-SI2309DS-T1-GE3-1190

            P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
            SI2309DS-TI

            Mfr.#: SI2309DS-TI

            OMO.#: OMO-SI2309DS-TI-1190

            Nuovo e originale
            SI2309DS-TI-E3

            Mfr.#: SI2309DS-TI-E3

            OMO.#: OMO-SI2309DS-TI-E3-1190

            Nuovo e originale
            SI2309DST1

            Mfr.#: SI2309DST1

            OMO.#: OMO-SI2309DST1-1190

            Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
            Disponibilità
            Azione:
            Available
            Su ordine:
            5500
            Inserisci la quantità:
            Il prezzo attuale di SI2309DS-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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