We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI2309DS-T1-GE3 DISTI # 15R4907 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 84R8025 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-E3 DISTI # 70026067 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W RoHS: Compliant | 0 |
|
| SI2309DS-T1 DISTI # 781-SI2309DS | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Not compliant | 0 | |
| SI2309DS-T1-E3 DISTI # 781-SI2309DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 | |
| SI2309DS-T1-GE3 DISTI # 781-SI2309DS-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 | |
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1272 |
|
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1581 |
|
| SI2309DST1 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Not Compliant | 2505 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2307CDS-T1-E3 OMO.#: OMO-SI2307CDS-T1-E3 |
MOSFET -30V Vds 20V Vgs SOT-23 |
|
Mfr.#: SI2305B-TP OMO.#: OMO-SI2305B-TP |
MOSFET -20V, -4.2A,PChannel Mosfet |
|
|
Mfr.#: SI2308DS-T1-E3 OMO.#: OMO-SI2308DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |
|
Mfr.#: SI2301DS OMO.#: OMO-SI2301DS-1190 |
MOSFET Transistor, P-Channel, TO-236 |
|
|
Mfr.#: SI2302DS-T1 OMO.#: OMO-SI2302DS-T1-1190 |
MOSFET 20V 2.8A 1.25 |
|
|
Mfr.#: SI2305DS-T1-GE3 OMO.#: OMO-SI2305DS-T1-GE3-1190 |
MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3 |
|
|
Mfr.#: SI2307 OMO.#: OMO-SI2307-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2302CDS-T1-GE3-CUT TAPE |
Nuovo e originale |
|
|
Mfr.#: SI2303CDS-T1-GE3-CUT TAPE |
Nuovo e originale |
|
Mfr.#: SI2302DS,215 |
MOSFET N-CH 20V 2.5A SOT23 |