We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2309DS-T1-GE3 DISTI # 15R4907 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 84R8025 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes | 0 | |
| SI2309DS-T1-GE3 DISTI # 781-SI2309DS-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2309DS OMO.#: OMO-SI2309DS |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
|
Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
|
Mfr.#: SI2309DS OMO.#: OMO-SI2309DS-1190 |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
|
|
Mfr.#: SI2309DS , M1MA151KT2 OMO.#: OMO-SI2309DS-M1MA151KT2-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2309DS-T1 OMO.#: OMO-SI2309DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
|
Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3-VISHAY |
MOSFET P-CH 60V 1.25A SOT23-3 |
|
|
Mfr.#: SI2309DS-T1-GE3 OMO.#: OMO-SI2309DS-T1-GE3-1190 |
P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs |
|
|
Mfr.#: SI2309DS-TI OMO.#: OMO-SI2309DS-TI-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2309DS-TI-E3 OMO.#: OMO-SI2309DS-TI-E3-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2309DST1 OMO.#: OMO-SI2309DST1-1190 |
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |