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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2312DS-T1-E3 DISTI # 06J7575 | Vishay Intertechnologies | MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes | 0 | |
| SI2312DS-T1 DISTI # 781-SI2312DS | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 RoHS: Not compliant | 0 | |
| SI2312DS-T1-E3 DISTI # 781-SI2312DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 RoHS: Compliant | 0 | |
| SI2312DS-T1 | Vishay Intertechnologies | 3786 | ||
| SI2312DS-T1 | Vishay Intertechnologies | 2755 |
| |
| SI2312DS-T1-E3 | Vishay Intertechnologies | 3 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2314EDS-T1-GE3 OMO.#: OMO-SI2314EDS-T1-GE3 |
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V |
|
Mfr.#: SI2311DS-T1-E3 OMO.#: OMO-SI2311DS-T1-E3-VISHAY |
MOSFET P-CH 8V 3A SOT23 |
|
Mfr.#: SI2313DS OMO.#: OMO-SI2313DS-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2315(ESD) OMO.#: OMO-SI2315-ESD--1190 |
Nuovo e originale |
|
|
Mfr.#: SI2315DS-T1 OMO.#: OMO-SI2315DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2315BDS-E3 |
|
|
Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3-VISHAY |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
|
Mfr.#: SI2318BDS OMO.#: OMO-SI2318BDS-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2319DS-T1-E3 OMO.#: OMO-SI2319DS-T1-E3-VISHAY |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
|
Mfr.#: SI2319DS-T1-GE3 OMO.#: OMO-SI2319DS-T1-GE3-VISHAY |
MOSFET P-CH 40V 2.3A SOT23-3 |
|
|
Mfr.#: SI2310-TP |
N-Channel Enhancement Mode Field Effect Transisto |