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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI2312DS-T1-E3 DISTI # 06J7575 | Vishay Intertechnologies | MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes | 0 | |
| SI2312DS-T1-E3 DISTI # 781-SI2312DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 RoHS: Compliant | 0 | |
| SI2312DS-T1-E3 | Vishay Intertechnologies | 3 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI2312DS OMO.#: OMO-SI2312DS-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2312DS-T1 OMO.#: OMO-SI2312DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 |
|
|
Mfr.#: SI2312DS-T1-E3 OMO.#: OMO-SI2312DS-T1-E3-1190 |
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage |
|
|
Mfr.#: SI2312DS-T1-GE3 OMO.#: OMO-SI2312DS-T1-GE3-1190 |
Nuovo e originale |
|
|
Mfr.#: SI2312DS-T1/C2T0D OMO.#: OMO-SI2312DS-T1-C2T0D-1190 |
Nuovo e originale |