TGF2929 stock, TGF2929, TGF2929-HM


PartNumber	TGF2929-HM	TGF2929-FL	TGF2929-FS
Description	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Manufacturer	Qorvo	Qorvo	Qorvo
Product Category	RF JFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Y	Y	Y
Transistor Type	HEMT	-	-
Technology	GaN SiC	GaN SiC	GaN SiC
Gain	17.4 dB	14 dB	14 dB
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	50 V	28 V	28 V
Vgs Gate Source Breakdown Voltage	- 2.8 V	-	-
Id Continuous Drain Current	7.2 A	12 A	12 A
Output Power	132 W	107 W	107 W
Minimum Operating Temperature	- 40 C	-	-
Maximum Operating Temperature	+ 85 C	-	-
Pd Power Dissipation	140 W	144 W	144 W
Mounting Style	SMD/SMT	-	-
Packaging	Waffle	Tray	Tray
Configuration	Single	-	-
Operating Frequency	DC to 3.5 GHz	3.5 GHz	3.5 GHz
Operating Temperature Range	- 40 C to + 85 C	-	-
Series	TGF	-	-
Brand	Qorvo	Qorvo	Qorvo
Development Kit	TGF2929-HM EVB1	-	-
Moisture Sensitive	Yes	Yes	Yes
Product Type	RF JFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	25	25	25
Subcategory	Transistors	MOSFETs	MOSFETs
Part # Aliases	1135635	1123811	1123716
Type	-	RF Power MOSFET	RF Power MOSFET
Vgs Gate Source Voltage	-	145 V	145 V
Vgs th Gate Source Threshold Voltage	-	- 2.9 V	- 2.9 V

Search Part Number : "TGF2929", Match & Start with "TGF2929" - Total : 8

Produttore	Parte #	Descrizione
Qorvo	TGF2929-HM	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
	TGF2929-FL	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	TGF2929-FS	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	TGF2929-HM	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
	TGF2929-FL	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	TGF2929-FS	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
	TGF2929-FS/FL, 3.1-3.5GHZ EVB	RF MOSFET Transistors DC-3.5GHz 100W Eval Board
	TGF2929-HM-EVB	RF Development Tools

TGF2929