TGF2929-FS

TGF2929-FS
Mfr. #:
TGF2929-FS
Produttore:
Qorvo
Descrizione:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TGF2929-FS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TGF2929-FS maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Tipo
MOSFET di potenza RF
Confezione
Vassoio
Alias ​​parziali
1123716
Tecnologia
GaN Si
Guadagno
14 dB
Potenza di uscita
107 W
Pd-Power-Dissipazione
144 W
Frequenza operativa
3.5 GHz
Vgs-Gate-Source-Voltage
145 V
Id-Continuo-Scarico-Corrente
12 A
Vds-Drain-Source-Breakdown-Voltage
28 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
- 2.9 V
Polarità del transistor
Canale N
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
TGF2929-FS
DISTI # 772-TGF2929-FS
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
23
  • 1:$351.0000
  • 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB
DISTI # 772-TGF2929-FS/FL-EV
QorvoRF Development Tools DC-3.5GHz 100W Eval Board
RoHS: Compliant
1
  • 1:$875.0000
1123716
DISTI # TGF2929-FS
QorvoRF POWER TRANSISTOR
RoHS: Compliant
10
  • 1:$90.0000
Immagine Parte # Descrizione
TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
TGF2956

Mfr.#: TGF2956

OMO.#: OMO-TGF2956

RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
TGF2935

Mfr.#: TGF2935

OMO.#: OMO-TGF2935

RF JFET Transistors DC-25GHz 5Watt NF 1.3dB GaN
TGF2952

Mfr.#: TGF2952

OMO.#: OMO-TGF2952-318

RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955-318

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

Nuovo e originale
TGF2960-SD

Mfr.#: TGF2960-SD

OMO.#: OMO-TGF2960-SD-1190

Nuovo e originale
TGF2960-SD   T/R

Mfr.#: TGF2960-SD T/R

OMO.#: OMO-TGF2960-SD-T-R-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di TGF2929-FS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
475,17 USD
475,17 USD
10
451,41 USD
4 514,12 USD
100
427,65 USD
42 765,30 USD
500
403,89 USD
201 947,25 USD
1000
380,14 USD
380 136,00 USD
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