TGF2952

TGF2952
Mfr. #:
TGF2952
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TGF2952 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TGF2952 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Cialda
Alias ​​parziali
1111797
Stile di montaggio
SMD/SMT
Intervallo operativo di temperatura
- 65 C to + 150 C
Pacchetto-Custodia
Morire
Tecnologia
GaN SiC
Configurazione
Separare
Tipo a transistor
HEMT
Guadagno
20.4 dB
Potenza di uscita
38.4 dBm
Pd-Power-Dissipazione
10.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 65
Frequenza operativa
15 GHz
Id-Continuo-Scarico-Corrente
480 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Polarità del transistor
Canale N
Tensione massima-Drain-Gate
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
TGF2952
DISTI # 772-TGF2952
QorvoRF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
1111797
DISTI # TGF2952
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$17.1900
Immagine Parte # Descrizione
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2936

Mfr.#: TGF2936

OMO.#: OMO-TGF2936

RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2022-24

Mfr.#: TGF2022-24

OMO.#: OMO-TGF2022-24-318

RF JFET Transistors DC-20GHz 2.4mm Pwr pHEMT (0.35um)
TGF2021-04

Mfr.#: TGF2021-04

OMO.#: OMO-TGF2021-04-318

RF JFET Transistors DC-12GHz 4mm Pwr pHEMT (0.35um)
TGF2160

Mfr.#: TGF2160

OMO.#: OMO-TGF2160-318

RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
TGF-154-CC-CC12VDC

Mfr.#: TGF-154-CC-CC12VDC

OMO.#: OMO-TGF-154-CC-CC12VDC-1190

Nuovo e originale
TGF4240-SCC

Mfr.#: TGF4240-SCC

OMO.#: OMO-TGF4240-SCC-1152

RF JFET Transistors DC-12.0GHz 1.4 Watt HFET
TGF3162

Mfr.#: TGF3162

OMO.#: OMO-TGF3162-1190

ARBITRARY FUNCTION GENERATOR, 2CH/160MHZ
TGF10-07870787-039

Mfr.#: TGF10-07870787-039

OMO.#: OMO-TGF10-07870787-039-LEADER-TECH

Thermal Gap Filler/White Grey 1.0W/m-K
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di TGF2952 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
36,93 USD
36,93 USD
10
35,08 USD
350,84 USD
100
33,24 USD
3 323,70 USD
500
31,39 USD
15 695,25 USD
1000
29,54 USD
29 544,00 USD
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