TGF2929-HM

TGF2929-HM
Mfr. #:
TGF2929-HM
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TGF2929-HM Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
TGF2929-HM maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
TGF
Confezione
Cialda
Alias ​​parziali
1135635
Stile di montaggio
SMD/SMT
Intervallo operativo di temperatura
- 40 C to + 85 C
Pacchetto-Custodia
Flange Ceramic-2
Tecnologia
GaN SiC
Configurazione
Separare
Tipo a transistor
HEMT
Guadagno
17.4 dB
Potenza di uscita
132 W
Pd-Power-Dissipazione
140 W
Massima temperatura di esercizio
+ 85 C
Temperatura di esercizio minima
- 40 C
Frequenza operativa
DC to 3.5 GHz
Id-Continuo-Scarico-Corrente
7.2 A
Vds-Drain-Source-Breakdown-Voltage
50 V
Polarità del transistor
Canale N
Kit di sviluppo
TGF2929-HM EVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.8 V
Tags
TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic
***hardson RFPD
RF POWER TRANSISTOR
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
TGF2929-HM
DISTI # 772-TGF2929-HM
QorvoRF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
RoHS: Compliant
0
  • 25:$338.4400
TGF2929-HM-EVB
DISTI # 772-TGF2929-HM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Immagine Parte # Descrizione
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
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Mfr.#: TGF2957

OMO.#: OMO-TGF2957

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OMO.#: OMO-TGF2936

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TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

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Mfr.#: TGF2979-SM

OMO.#: OMO-TGF2979-SM-318

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TGF2956

Mfr.#: TGF2956

OMO.#: OMO-TGF2956-318

RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
TGF2929-HM-EVB

Mfr.#: TGF2929-HM-EVB

OMO.#: OMO-TGF2929-HM-EVB-1152

RF Development Tools
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
1000
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Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
507,66 USD
507,66 USD
10
482,28 USD
4 822,77 USD
100
456,89 USD
45 689,40 USD
500
431,51 USD
215 755,50 USD
1000
406,13 USD
406 128,00 USD
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