SIS

SISS26DN-T1-GE3 vs SISS23DN-T1-GE3 vs SISS26LDN-T1-GE3

 
PartNumberSISS26DN-T1-GE3SISS23DN-T1-GE3SISS26LDN-T1-GE3
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK 1212-8SMOSFET -20V Vds 8V Vgs PowerPAK 1212-8SMOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8S-8PowerPAK-1212-8PowerPAK1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V20 V60 V
Id Continuous Drain Current60 A50 A81.2 A
Rds On Drain Source Resistance3.7 mOhms3.5 mOhms4.3 mOhms
Vgs th Gate Source Threshold Voltage6.7 V900 mV1 V
Vgs Gate Source Voltage20 V8 V20 V
Qg Gate Charge24.5 nC300 nC48 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation57 W57 W57 W
ConfigurationSingleSingleSingle
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReelReel
SeriesSISSISSIS
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time9 ns50 ns6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns50 ns6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns140 ns26 ns
Typical Turn On Delay Time10 ns45 ns11 ns
Channel Mode-EnhancementEnhancement
Height-1.04 mm-
Length-3.3 mm-
Transistor Type-1 P-Channel1 N-Channel
Width-3.3 mm-
Forward Transconductance Min-44 S54 S
  • Iniziare con
  • SIS 843
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SISS42LDN-T1-GE3 MOSFET Nch 100V Vds 20V Vgs PowerPAK 1212-8S
SISS92DN-T1-GE3 MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
SISS32DN-T1-GE3 MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
SISS26DN-T1-GE3 MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
SiSS42DN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
SISS67DN-T1-GE3 MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
SISS64DN-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
SISS98DN-T1-GE3 MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S
SISS28DN-T1-GE3 MOSFET N-Ch 25V Vds 21.8nC Qg Typ
SISS71DN-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8S
SISS40DN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
SISS27DN-T1-GE3 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
SISS23DN-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
SISS60DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode
SISS66DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode
SISS73DN-T1-GE3 MOSFET P-Channel 150 V (D-S) MOSFET
SISS46DN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
SISS27ADN-T1-GE3 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
SISS61DN-T1-GE3 MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
SISS30DN-T1-GE3 MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
SISS65DN-T1-GE3 MOSFET -30V Vds -/+20V Vgs PowerPAK 1212-8S
SISS30LDN-T1-GE3 MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8S
SISS26LDN-T1-GE3 MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
SISS70DN-T1-GE3 MOSFET 125V Vds 20V Vgs PowerPAK 1212-8S
SISS72DN-T1-GE3 MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
SISS61DN-T1-GE3 MOSFET P-CH 20V PPAK 1212-8S
Vishay
Vishay
SISS27DN-T1-GE3 IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
SISS40DN-T1-GE3 RF Bipolar Transistors MOSFET 100V .0210ohm@10V 36.5A N-Ch T-FET
SISS27ADN-T1-GE3 MOSFET P-CH 30V 50A POWERPAK1212
SISS65DN-T1-GE3 MOSFET P-CHAN 30V PPAK 1212-8S
SISS70DN-T1-GE3 MOSFET N-CH 125V
SISS72DN-T1-GE3 MOSFET N-CH 150V
SISS98DN-T1-GE3 MOSFET N-CH 200V 14.1A 1212-8
SISS71DN-T1-GE3 MOSFET P-CH 100V 23A 1212-8
SISS23DN-T1-GE3 MOSFET P-CH 20V 50A PPAK 1212-8S
SISS26DN-T1-GE3 MOSFET N-CHANNEL 60V 60A 1212-8S
SISS28DN-T1-GE3 MOSFET N-CH 25V 60A POWERPAK1212
SISS64DN-T1-GE3 MOSFET N-CHANNEL 30V 40A 1212-8S
SISS67DN-T1-GE3 MOSFET P-CHAN 30V POWERPAK 1212-
SISS30DN-T1-GE3 N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG , 8.25 m @ 10V 8.2 m @ 7.5V m @ 4.5V
SISS32DN-T1-GE3 N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 7.2 m @ 10V 7 m @ 7.5V m @ 4.5V
SISS42DN-T1-GE3 MOSFET N-CHAN 100V POWERPAK 1212
SISS46DN-T1-GE3 N-Channel 100-V (D-S) MOSFET PowerPAK 1212-8S 250M SG 2 mil , 12.8 m @ 10V 11.2 m @ 7.5V m @ 4.5V
SISS92DN-T1-GE3 MOSFET N-CH 250V POWERPAK 1212
SISS23DNT1GE3 Power Field-Effect Transisto
SISS27DN Nuovo e originale
SISS27DN-T1-G3 Nuovo e originale
SISS40DN Nuovo e originale
SISS98DNT1GE3 Power Field-Effect Transisto
SISSD12M-4R7FB Nuovo e originale
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