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| PartNumber | SISA01DN-T1-GE3 | SIS990DN-T1-GE3 | SISA04DN-T1-GE3 |
| Description | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 100 V | 30 V |
| Id Continuous Drain Current | 60 A | 12.1 A | 40 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 85 mOhms | 1.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.5 V | 1.1 V |
| Vgs Gate Source Voltage | 16 V, - 20 V | 20 V | 20 V, - 16 V |
| Qg Gate Charge | 56 nC | 8 nC | 77 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 25 W | 52 W |
| Configuration | Single | Dual | Single |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SIS | SIS | SIS |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 10 ns | 6 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | 8 ns | 17 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 8 ns | 25 ns |
| Typical Turn On Delay Time | 15 ns | 8 ns | 24 ns |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 2 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 11 S | 105 S |
| Part # Aliases | - | - | SISA04DN-GE3 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SISA01DN-T1-GE3 | MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 | |
| SiSA26DN-T1-GE3 | MOSFET 25V Vds 16V Vgs PowerPAK 1212-8 | ||
| SIS990DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA18ADN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA12ADN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA04DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA14DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA10DN-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | ||
| SISA40DN-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 | ||
| SISA16DN-T1-GE3 | MOSFET N-Ch PowerPAK1212 | ||
| SISA66DN-T1-GE3 | MOSFET 30V Vds TrenchFET PowerPAK 1212-8 | ||
| SISA34DN-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISA18ADN-T1-GE3 | ||
Vishay |
SIS990DN-T1-GE3 | RF Bipolar Transistors MOSFET 100V .085ohm@10V 12.1A Dual N-Ch | |
| SISA01DN-T1-GE3 | MOSFET P-CH 30V POWERPAK 1212-8 | ||
| SISA04DN-T1-GE3 | MOSFET N-CH 30V 40A 1212-8 | ||
| SISA10DN-T1-GE3 | MOSFET N-CH 30V 30A 1212-8 | ||
| SISA14DN-T1-GE3 | MOSFET N-CH 30V 20A 1212-8 | ||
| SISA16DN-T1-GE3 | MOSFET N-CH 30V D-S PPAK 1212-8 | ||
| SISA18DN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 | ||
| SISA24DN-T1-GE3 | MOSFET N-CH 25V 60A POWERPAK1212 | ||
| SISA12ADN-T1-GE3 | MOSFET N-CH 30V 25A 1212-8 | ||
| SISA18ADN-T1-GE3 | MOSFET N-CH 30V 38.3A 1212-8 | ||
| SISA26DN-T1-GE3 | N-Channel 25 V (D-S) MOSFET | ||
| SISA34DN-T1-GE3 | N-Channel 30 V (D-S) MOSFET | ||
| SISA40DN-T1-GE3 | N-Channel 20-V (D-S) MOSFET PowerPAK 1212-8 1G SG DUV 2 mil , 1.1 m @ 10V m @ 7.5V 1.45 m @ 4.5V | ||
| SIS965L(A3) | Nuovo e originale | ||
| SIS965L/SIS04 | Nuovo e originale | ||
| SIS966L | Nuovo e originale | ||
| SIS967BO | Nuovo e originale | ||
| SIS968 (BO) | Nuovo e originale | ||
| SIS968 B0 | Nuovo e originale | ||
| SIS968BO | Nuovo e originale | ||
| SIS968ZB | Nuovo e originale | ||
| SIS9926SQ | Nuovo e originale | ||
| SISA04DNT1GE3 | Nuovo e originale | ||
| SISA10DN | Nuovo e originale | ||
| SISA10DN-T1-E3 | Nuovo e originale | ||
| SISA12ADN | Nuovo e originale | ||
| SISA12ADN-T1-GT3 | Nuovo e originale | ||
| SISA18ADNT1GE3 | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SISA18JN-T1-GE3 | Nuovo e originale | ||
| SIS966ZA1DA-HL-1 | Nuovo e originale | ||
| SIS968B0 | Nuovo e originale | ||
| SIS968BOAA | Nuovo e originale | ||
| SIS968 | Nuovo e originale | ||
| SIS968 BO | Nuovo e originale | ||
| SIS968 BOAA | Nuovo e originale | ||
| SISA10DN-T1 | Nuovo e originale | ||
| SISA12DN-T1-GE3 | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 25A, 4.3mohm @ 10V, PowerPAK 1212-8 | ||
| SISA12JN-T1-GE3 | Nuovo e originale |