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SiSA26DN-T1-GE3

SiSA26DN-T1-GE3
Mfr. #:
SiSA26DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SiSA26DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SiSA26DN-T1-GE3 DatasheetSiSA26DN-T1-GE3 Datasheet (P4-P6)SiSA26DN-T1-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
SiSA26DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
25 V
Id - Corrente di scarico continua:
60 A
Rds On - Resistenza Drain-Source:
2.15 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
16 V, - 12 V
Qg - Carica cancello:
44 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
39 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
SiSA26DN
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
88 S
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
23 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
16 ns
Tempo di ritardo di accensione tipico:
9 ns
Tags
SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET N-CH 25V 29.1A 8-Pin PowerPAK 1212 EP T/R
***i-Key
MOSFET N-CH 25V 60A POWERPAK1212
***ark
Mosfet, N-Ch, 25V, 60A, 150Deg C, 39W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00215Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 25V, 60A, 150°C, 39W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00215ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SISA26DN-T1-GE3
DISTI # V72:2272_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 75000:$0.2871
  • 30000:$0.2901
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 10:$0.7377
  • 1:$0.9122
SISA26DN-T1-GE3
DISTI # V99:2348_21388883		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET0
  • 6000000:$0.3107
  • 3000000:$0.3109
  • 600000:$0.3155
  • 60000:$0.3218
  • 6000:$0.3228
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5631In Stock
  • 1000:$0.3668
  • 500:$0.4586
  • 100:$0.5801
  • 10:$0.7570
  • 1:$0.8600
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 60A POWERPAK1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.2820
  • 15000:$0.2894
  • 6000:$0.3005
  • 3000:$0.3228
SISA26DN-T1-GE3
DISTI # 31355217		Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET6000
  • 15000:$0.2932
  • 6000:$0.2963
  • 3000:$0.2994
  • 1000:$0.3261
  • 500:$0.4122
  • 250:$0.4599
  • 100:$0.5110
  • 50:$0.5923
  • 25:$0.6581
  • 22:$0.7377
SISA26DN-T1-GE3
DISTI # SISA26DN-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA26DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2709
  • 30000:$0.2789
  • 18000:$0.2869
  • 12000:$0.2989
  • 6000:$0.3079
SISA26DN-T1-GE3
DISTI # 81AC2791		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00215ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes6040
  • 1000:$0.3430
  • 500:$0.4280
  • 250:$0.4740
  • 100:$0.5190
  • 50:$0.5740
  • 25:$0.6290
  • 10:$0.6840
  • 1:$0.8480
SISA26DN-T1-GE3
DISTI # 59AC7446		Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 50000:$0.2740
  • 30000:$0.2870
  • 20000:$0.3080
  • 10000:$0.3290
  • 5000:$0.3570
  • 1:$0.3650
SiSA26DN-T1-GE3
DISTI # 78-SISA26DN-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant		5895
  • 1:$0.8400
  • 10:$0.6770
  • 100:$0.5140
  • 500:$0.4240
  • 1000:$0.3400
  • 3000:$0.3080
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W6045
  • 500:£0.3070
  • 250:£0.3400
  • 100:£0.3720
  • 10:£0.5390
  • 1:£0.6960
SISA26DN-T1-GE3
DISTI # 2932955		Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 39W
RoHS: Compliant		6040
  • 1000:$0.4720
  • 500:$0.4990
  • 250:$0.5870
  • 100:$0.7140
  • 10:$0.9090
  • 1:$1.1000
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Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
Il prezzo attuale di SiSA26DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,84 USD
0,84 USD
10
0,68 USD
6,77 USD
100
0,51 USD
51,40 USD
500
0,42 USD
212,00 USD
1000
0,34 USD
340,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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