Compared with the closest competing devices in the CSP 1 mm² package, the on-resistance of the Vishay Siliconix Si8410DB represents an improvement of 26 % at 4.5 V, 32 % at 2.5 V, 35 % at 1.8 V, and 27 % at 1.5 V ratings. Compared with devices in the DFN 1 mm² package, on-resistance is 32 % lower at 4.5 V, 40 % lower at 2.5 V, 48 % lower at 1.8 V, and 43 % lower at 1.5 V ratings. The device’s low on-resistance, ratings down to 1.5 V, and ± 8 V VGS provide a combination of safety margin, gate drive design flexibility, and high performance for lithium ion battery-powered applications.

The Si8410DB offers an extremely low on-resistance per area of 30 mΩ-mm² — 28 % lower than the closest competing 20 V DFN 1 mm² MOSFET — to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The combination of lower on-resistance and lower thermal resistance results in 45 % and 144 % lower temperature rise than the next-best devices in CSP and DFN 1 mm² packages, respectively.

Features and Benefits

• Compact MICRO FOOT 1 mm² package with ultra-thin 0.54 maximum height saves space
• Extremely low on-resistance to reduce battery power consumption
• On-resistance ratings from 4.5 V to 1.5 V provide gate drive design flexibility
• ±8 V VGS provides an extra margin of safety in lithium ion battery-powered applications
• RoHS-compliant and halogen-free

Applications

• Load switch, small-signal switch, and high-speed switch in power management applications for:
• Phablets
• Smartphones
• Tablets
• Wearable devices
• Solid-state drives