SISS27DN-T1-GE3

Mfr. #:: SISS27DN-T1-GE3
Produttore:: Vishay
Descrizione:: IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SISS27DN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: SISS27DN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Single

Serie: SISxxxDN

Confezione: Bobina

Stile di montaggio: SMD/SMT

Nome depositato: MOSFET di potenza TrenchFET

Pacchetto-Custodia: PowerPAK-1212-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 P-Channel

Pd-Power-Dissipazione: 57 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 20 ns

Ora di alzarsi: 45 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: - 50 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1 V to - 2.2 V

Rds-On-Drain-Source-Resistenza: 5.6 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 50 ns

Tempo di ritardo all'accensione tipico: 60 ns

Qg-Gate-Carica: 45 nC

Transconduttanza diretta-Min: 52 S

Modalità canale: Aumento

Tags: SISS27D, SISS27, SISS2, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS27DN-T1-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3402
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3867 500:$0.4833 100:$0.6525 10:$0.8460 1:$0.9700
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3867 500:$0.4833 100:$0.6525 10:$0.8460 1:$0.9700
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3099 6000:$0.3009 12000:$0.2889 18000:$0.2809 30000:$0.2729
SISS27DN-T1-GE3 DISTI # SISS27DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SISS27DN-T1-GE3 DISTI # 99W9575	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	1:$0.3670 5000:$0.3590 10000:$0.3310 20000:$0.3100 30000:$0.2880 50000:$0.2760
SISS27DN-T1-GE3 DISTI # 70459595	Vishay Siliconix	SISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$0.9590
SISS27DN-T1-GE3 DISTI # 78-SISS27DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant	0	1:$0.8500 10:$0.6810 100:$0.5170 500:$0.4270 1000:$0.3420 3000:$0.3100
SISS27DN-T1-GE3 DISTI # 8141323	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 23A, PK	100	20:£0.1870 100:£0.1840
SISS27DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S	Americas - Stock

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SISS27DN-T1-GE3 OMO.#: OMO-SISS27DN-T1-GE3	MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
	Mfr.#: SISS27DN-T1-GE3 OMO.#: OMO-SISS27DN-T1-GE3-VISHAY	IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
	Mfr.#: SISS27DN OMO.#: OMO-SISS27DN-1190	Nuovo e originale
	Mfr.#: SISS27DN-T1-G3 OMO.#: OMO-SISS27DN-T1-G3-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
Inserisci la quantità:

Il prezzo attuale di SISS27DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,41 USD~~; ~~0,41 USD~~

10: ~~0,39 USD~~; ~~3,89 USD~~

100: ~~0,37 USD~~; ~~36,84 USD~~

500: ~~0,35 USD~~; ~~173,95 USD~~

1000: ~~0,33 USD~~; ~~327,50 USD~~

Iniziare con

SISS27D 3
SISS27 4
SISS2 11
SISS 45
SIS 843

SISS27DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes