 | | | |
| PartNumber | SI2314EDS-T1-E3 | SI2312CDS-T1-GE3 | SI2314EDS-T1-GE3 |
| Description | MOSFET N-CHANNEL 20-V (D-S) MOSFET | MOSFET 20V Vds 8V Vgs SOT-23 | MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI2 | SI2 | SI2 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI2314EDS-E3 | SI2312CDS-GE3 SI7621DN-T1-GE3 | SI2314EDS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-23-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 6 A | - |
| Rds On Drain Source Resistance | - | 31.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 450 mV | - |
| Vgs Gate Source Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 18 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.1 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.45 mm | - |
| Length | - | 2.9 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 1.6 mm | - |
| Forward Transconductance Min | - | 24 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 17 ns | - |
| Typical Turn Off Delay Time | - | 31 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2316BDS-T1-GE3 | MOSFET 30V 4.5A 1.66W 50mohm @ 10V | |
| SI2315BDS-T1-E3 | MOSFET 1.8V 3.2A 1.25W | ||
| SI2316DS-T1-E3 | MOSFET 30V 3.4A 0.96W 50mohm @ 10V | ||
| SI2314EDS-T1-E3 | MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
| SI2312CDS-T1-GE3 | MOSFET 20V Vds 8V Vgs SOT-23 | ||
| SI2315BDS-T1-GE3 | MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V | ||
| SI2314EDS-T1-GE3 | MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V | ||
| SI2316BDS-T1-E3 | MOSFET 30V 4.5A 1.66W | ||
Vishay |
SI2312CDS-T1-GE3 | MOSFET N-CH 20V 6A SOT-23 | |
| SI2314EDS-T1-E3 | MOSFET N-CH 20V 3.77A SOT23-3 | ||
| SI2315BDS-T1-E3 | MOSFET P-CH 12V 3A SOT23-3 | ||
| SI2315BDS-T1-GE3 | MOSFET P-CH 12V 3A SOT23-3 | ||
| SI2316BDS-T1-E3 | MOSFET N-CH 30V 4.5A SOT-23 | ||
| SI2316BDS-T1-GE3 | MOSFET N-CH 30V 4.5A SOT23-3 | ||
| SI2314EDS-T1-GE3 | RF Bipolar Transistors MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V | ||
| SI2312CDS-T1-GE3(P5) | Nuovo e originale | ||
| SI2312DS-T1-E3 | MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage | ||
| SI2312DS-T1-GE3 | Nuovo e originale | ||
| SI2312DS-T1/C2T0D | Nuovo e originale | ||
| SI2313BDS-T1-GE3 | Nuovo e originale | ||
| SI2313DS-T1-E3 | Nuovo e originale | ||
| SI2313DS-T1-GE3 | Nuovo e originale | ||
| SI2314 AE9T | Nuovo e originale | ||
| SI2314DS | Nuovo e originale | ||
| SI2314DS-T1-E3 | Nuovo e originale | ||
| SI2314EDS | Nuovo e originale | ||
| SI2315(ESD) | Nuovo e originale | ||
| SI2315BDST1 | Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| SI2315DS | 3.5 A, 12 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236 | ||
| SI2315DS-T1 , MAX3243CUI | Nuovo e originale | ||
| SI2315DS-T1 , MAX3243CUI+T | Nuovo e originale | ||
| SI2315DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2315BDS-E3 | ||
| SI2315DS-T1-GE3 | Nuovo e originale | ||
| SI2315DS-T1/C5RAB | Nuovo e originale | ||
| SI2315DS-TI | Nuovo e originale | ||
| SI2316BDS | Nuovo e originale | ||
| SI2316DS-T1 | MOSFET RECOMMENDED ALT 781-SI2316BDS-E3 | ||
| SI2312CDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
| SI2315BDS-T1-E3-CUT TAPE | Nuovo e originale | ||
| SI2316BDS-T1-E3-CUT TAPE | Nuovo e originale | ||
| SI2316BDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
| SI2312DS | Nuovo e originale | ||
| SI2312DS-T1 | MOSFET RECOMMENDED ALT 781-SI2312BDS-E3 | ||
| SI2313 | Nuovo e originale | ||
| SI2313DS | Nuovo e originale | ||
| SI2313DS-T1 | Nuovo e originale | ||
| SI2314 | Nuovo e originale | ||
| SI2315 | Nuovo e originale | ||
| SI2315DS-T1 | MOSFET RECOMMENDED ALT 781-SI2315BDS-E3 | ||
| SI2314 A09T | Nuovo e originale |