SI2315BDS-T1-GE3

SI2315BDS-T1-GE3
Mfr. #:
SI2315BDS-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET P-CH 12V 3A SOT23-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2315BDS-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
SI2315BDS-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SI2315BDS-T, SI2315B, SI2315, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 0.100 Ohm 15 nC 0.75 W Silicon SMT Mosfet - SOT-23
***ical
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; Power Dissipation Pd:750mW; MSL:-
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2315BDS-T1-GE3
DISTI # V72:2272_09216797
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 3000:$0.2356
  • 1000:$0.2628
  • 500:$0.3306
  • 250:$0.3925
  • 100:$0.4086
  • 25:$0.4833
  • 10:$0.5907
  • 1:$0.7277
SI2315BDS-T1-GE3
DISTI # V36:1790_09216797
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.2318
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10193In Stock
  • 1000:$0.2942
  • 500:$0.3677
  • 100:$0.4652
  • 10:$0.6070
  • 1:$0.6900
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10193In Stock
  • 1000:$0.2942
  • 500:$0.3677
  • 100:$0.4652
  • 10:$0.6070
  • 1:$0.6900
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 12V 3A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 30000:$0.2261
  • 15000:$0.2321
  • 6000:$0.2410
  • 3000:$0.2588
SI2315BDS-T1-GE3
DISTI # 31974717
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
15000
  • 3000:$0.1688
SI2315BDS-T1-GE3
DISTI # 31690807
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 27:$0.7277
SI2315BDS-T1-GE3
DISTI # 21306300
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R
RoHS: Compliant
2629
  • 265:$0.2908
SI2315BDS-T1-GE3
DISTI # SI2315BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI2315BDS-T1-GE3
    DISTI # SI2315BDS-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2315BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      SI2315BDS-T1-GE3
      DISTI # 84R8028
      Vishay IntertechnologiesTrans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 84R8028)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack
      Americas - 0
      • 1000:$0.3400
      • 500:$0.4250
      • 250:$0.4700
      • 100:$0.5150
      • 50:$0.5980
      • 25:$0.6790
      • 1:$0.8500
      SI2315BDS-T1-GE3
      DISTI # 33P5176
      Vishay IntertechnologiesP CH MOSFET, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,No. of Pins:3Pins RoHS Compliant: Yes0
      • 50000:$0.2200
      • 30000:$0.2300
      • 20000:$0.2470
      • 10000:$0.2640
      • 5000:$0.2860
      • 1:$0.2930
      SI2315BDS-T1-GE3
      DISTI # 84R8028
      Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:750mW RoHS Compliant: Yes2629
      • 1:$0.1890
      • 25:$0.1890
      • 50:$0.1890
      • 100:$0.1890
      • 250:$0.1890
      • 500:$0.1890
      • 1000:$0.1890
      SI2315BDS-T1-GE3
      DISTI # 781-SI2315BDS-GE3
      Vishay IntertechnologiesMOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
      RoHS: Compliant
      3586
      • 1:$0.6700
      • 10:$0.5420
      • 100:$0.4110
      • 500:$0.3400
      • 1000:$0.2720
      • 3000:$0.2460
      • 6000:$0.2290
      • 9000:$0.2210
      SI2315BDS-T1-GE3
      DISTI # 1867177
      Vishay IntertechnologiesP CHANNEL MOSFET
      RoHS: Compliant
      2979
      • 3000:$0.3720
      • 1000:$0.4100
      • 500:$0.5120
      • 100:$0.6210
      • 10:$0.8180
      • 1:$1.0100
      SI2315BDS-T1-GE3
      DISTI # 1867177
      Vishay IntertechnologiesP CHANNEL MOSFET2629
      • 250:£0.3440
      • 100:£0.3770
      • 50:£0.4370
      • 25:£0.4960
      • 1:£0.6130
      Immagine Parte # Descrizione
      SI2315BDS-T1-E3

      Mfr.#: SI2315BDS-T1-E3

      OMO.#: OMO-SI2315BDS-T1-E3

      MOSFET 1.8V 3.2A 1.25W
      SI2315BDS-T1-GE3

      Mfr.#: SI2315BDS-T1-GE3

      OMO.#: OMO-SI2315BDS-T1-GE3

      MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V
      SI2315BDS-T1-E3

      Mfr.#: SI2315BDS-T1-E3

      OMO.#: OMO-SI2315BDS-T1-E3-VISHAY

      MOSFET P-CH 12V 3A SOT23-3
      SI2315BDS-T1-GE3

      Mfr.#: SI2315BDS-T1-GE3

      OMO.#: OMO-SI2315BDS-T1-GE3-VISHAY

      MOSFET P-CH 12V 3A SOT23-3
      SI2315BDST1

      Mfr.#: SI2315BDST1

      OMO.#: OMO-SI2315BDST1-1190

      Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
      SI2315BDS-T1-E3-CUT TAPE

      Mfr.#: SI2315BDS-T1-E3-CUT TAPE

      OMO.#: OMO-SI2315BDS-T1-E3-CUT-TAPE-1190

      Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SI2315BDS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,26 USD
      0,26 USD
      10
      0,25 USD
      2,48 USD
      100
      0,23 USD
      23,45 USD
      500
      0,22 USD
      110,75 USD
      1000
      0,21 USD
      208,40 USD
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