| PartNumber | IXTT1N250HV-TRL | IXTT1N300P3HV | IXTT1N100 |
| Description | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET DISC MOSFET N-CH STD-POLAR3 | MOSFET 1 Amps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268S-3 | TO-268HV-2 | TO-268-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | - | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 39 ns | 60 ns | 18 ns |
| Id Continuous Drain Current | 1.5 A | 1 A | 1.5 A |
| Pd Power Dissipation | 250 W | 195 W | 60 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 40 Ohms | 50 Ohms | 11 Ohms |
| Rise Time | 25 ns | 35 ns | 19 ns |
| Factory Pack Quantity | 400 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 132 ns | 78 ns | 20 ns |
| Typical Turn On Delay Time | 69 ns | 22 ns | 18 ns |
| Vds Drain Source Breakdown Voltage | 2500 V | 3 kV | 1 kV |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Qg Gate Charge | - | 30.6 nC | - |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Height | - | - | 5.1 mm |
| Length | - | - | 16.05 mm |
| Series | - | - | IXTT1N100 |
| Width | - | - | 14 mm |
| Unit Weight | - | - | 0.158733 oz |