IPD

IPD122N10N3GATMA1 vs IPD110N12N3GATMA1 vs IPD110N12N3GBUMA1

 
PartNumberIPD122N10N3GATMA1IPD110N12N3GATMA1IPD110N12N3GBUMA1
DescriptionMOSFETMOSFET MV POWER MOSMOSFET N-CH 120V 75A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TO-252-3PG-TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V120 V-
Id Continuous Drain Current59 A75 A-
Rds On Drain Source Resistance12.2 mOhms11 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge26 nC49 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation94 W136 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min29 S42 S-
Fall Time5 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns16 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time14 ns16 ns-
Part # AliasesG IPD122N10N3 SP001127828G IPD110N12N3 SP001127808-
Unit Weight0.017637 oz0.017284 oz-
  • Iniziare con
  • IPD 1152
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD122N10N3GATMA1 MOSFET
IPD110N12N3GATMA1 MOSFET MV POWER MOS
IPD135N03LGATMA1 MOSFET N-Ch 30V 30A DPAK-2
IPD12CN10NGATMA1 MOSFET MV POWER MOS
IPD127N06L G MOSFET N-Ch 60V 50A DPAK-2
IPD135N03L G MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3
IPD122N10N3GATMA1 MOSFET N-CH 100V 59A
IPD135N03LGBTMA1 LV POWER MOS
IPD12CNE8N G MOSFET N-CH 85V 67A TO252-3
IPD12N03LB G MOSFET N-CH 30V 30A TO-252
IPD110N12N3GATMA1 MOSFET N-CH 120V 75A TO252-3
IPD110N12N3GBUMA1 MOSFET N-CH 120V 75A TO252-3
IPD122N10N3GBTMA1 MOSFET N-CH 100V 59A TO252-3
IPD127N06LGBTMA1 MOSFET N-CH 60V 50A TO-252
IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
IPD12CN10NGBUMA1 MOSFET N-CH 100V 67A TO252-3
IPD135N03L G Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
IPD135N03LGATMA1 MOSFET N-CH 30V 30A TO252-3
IPD135N03LGXT MOSFET N-CH 30V 30A TO252-3
IPD127N06L G MOSFET N-Ch 60V 50A DPAK-2
Infineon Technologies
Infineon Technologies
IPD135N03LGBTMA1 MOSFET LV POWER MOS
IPD127N06LGBTMA1 MOSFET MV POWER MOS
IPD110N12N3G Nuovo e originale
IPD127N06L Nuovo e originale
IPD127N06LG POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
IPD12CNE8N Nuovo e originale
IPD135N03L Nuovo e originale
IPD11N03L Nuovo e originale
IPD11NC10NG Nuovo e originale
IPD122N10N3 G MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3
IPD122N10N3G 100V,59A,N Channel Power MOSFET
IPD122N10N3GB Nuovo e originale
IPD122N10N3GBTMA1 , 2SD2 Nuovo e originale
IPD127N06LGXT Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD127N06LGBTMA1)
IPD12C10N G Nuovo e originale
IPD12CN10NGATMA1 , 2SD20 Nuovo e originale
IPD12CN10NGBUMA1 , 2SD21 Nuovo e originale
IPD12CNE8NG Nuovo e originale
IPD12N03 Nuovo e originale
IPD12N03L 30 A, 30 V, 0.0147 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
IPD12N03LAG Nuovo e originale
IPD12N03LB Nuovo e originale
IPD12N03LBG Nuovo e originale
IPD12S016PW Nuovo e originale
IPD135N03 Nuovo e originale
IPD135N03L,135N03L,IPD13 Nuovo e originale
IPD12CN10N G MOSFET N-Ch 100V 67A DPAK-2 OptiMOS 2
IPD12CN10N Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3
IPD12CN10NG Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG)
IPD135N03LG Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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