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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPD10N03LA G DISTI # IPD10N03LAG-ND | Infineon Technologies AG | MOSFET N-CH 25V 30A DPAK Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD10N03LAG DISTI # 726-IPD10N03LAG | Infineon Technologies AG | MOSFET N-Ch 25V 30A DPAK-2 RoHS: Compliant | 0 | |
| IPD10N03LAG | Infineon Technologies AG | 627 |
| |
| IPD10N03LAG | Infineon Technologies AG | 784 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: IPD127N06L G OMO.#: OMO-IPD127N06L-G |
MOSFET N-Ch 60V 50A DPAK-2 |
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Mfr.#: IPD127N06LGBTMA1 OMO.#: OMO-IPD127N06LGBTMA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPD122N10N3 G OMO.#: OMO-IPD122N10N3-G-1190 |
MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 |
|
Mfr.#: IPD122N10N3GBTMA1 |
MOSFET N-CH 100V 59A TO252-3 |
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|
Mfr.#: IPD127N06LG OMO.#: OMO-IPD127N06LG-1190 |
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0127OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA |
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Mfr.#: IPD12C10N G OMO.#: OMO-IPD12C10N-G-1190 |
Nuovo e originale |
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Mfr.#: IPD12CN10N OMO.#: OMO-IPD12CN10N-1190 |
Infineon N-Channel Power MOSFET IPD12CN10N G - TO252-3 |
|
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Mfr.#: IPD12CN10NG OMO.#: OMO-IPD12CN10NG-1190 |
Trans MOSFET N-CH 100V 67A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD12CN10NG) |
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Mfr.#: IPD12CN10NGATMA1 |
MOSFET N-CH 100V 67A TO252-3 |
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Mfr.#: IPD127N06L G OMO.#: OMO-IPD127N06L-G-128 |
MOSFET N-Ch 60V 50A DPAK-2 |