IPD135N03LGATMA1

Mfr. #:: IPD135N03LGATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 30V 30A DPAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD135N03LGATMA1 Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 30 A

Rds On - Resistenza Drain-Source:: 13.5 mOhms

Configurazione:: Separare

Nome depositato:: OptiMOS

Confezione:: Bobina

Altezza:: 2.3 mm

Lunghezza:: 6.5 mm

Serie:: OptiMOS 3

Tipo di transistor:: 1 N-Channel

Larghezza:: 6.22 mm

Marca:: Tecnologie Infineon

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Parte # Alias:: G IPD135N03L IPD135N3LGXT SP000796912

Unità di peso:: 0.139332 oz

Tags: IPD135N03LG, IPD135N03L, IPD135N03, IPD135, IPD13, IPD1, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD135N03LGATMA1 Descrizione

***ure Electronics: Single N-Channel 30 V 13.5 mOhm 6.4 nC OptiMOS Power Mosfet - TO-252-3

***p One Stop Japan: Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252

***ical: Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK

***et: Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R

***Components: MOSFET N-Channel 30V 30A OptiMOS3 TO252

***an P&S: 30V,30A,N Channel Power MOSFET

***ark: MOSFET, N CHANNEL, 30V, 30A, TO-252

***i-Key: MOSFET N-CH 30V 35A TO252-3

***ronik: N-CH 30V 30A 14mOhm TO252-3 RoHSconf

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 30A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:31W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:30A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***nell: MOSFET, CANALE N, 30A, 30V, PG-TO252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0113ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:30A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V; Tipo di Transistor:Power MOSFET

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD135N03LGATMA1 DISTI # V72:2272_06391086	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	743	500:$0.3279 250:$0.3305 100:$0.3646 25:$0.5550 10:$0.6183 1:$0.7395
IPD135N03LGATMA1 DISTI # V36:1790_06391086	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.2127 1250000:$0.2130 250000:$0.2345 25000:$0.2718 2500:$0.2780
IPD135N03LGATMA1 DISTI # IPD135N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6819In Stock	1000:$0.3160 500:$0.3950 100:$0.4996 10:$0.6520 1:$0.7400
IPD135N03LGATMA1 DISTI # IPD135N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6819In Stock	1000:$0.3160 500:$0.3950 100:$0.4996 10:$0.6520 1:$0.7400
IPD135N03LGATMA1 DISTI # IPD135N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	25000:$0.2429 12500:$0.2492 5000:$0.2588 2500:$0.2780
IPD135N03LGATMA1 DISTI # 33651457	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	743	25:$0.7395
IPD135N03LGATMA1 DISTI # SP000796912	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R (Alt: SP000796912) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2119 15000:€0.2289 10000:€0.2479 5000:€0.2699 2500:€0.3309
IPD135N03LGXT DISTI # IPD135N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD135N03LGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2319 15000:$0.2359 10000:$0.2439 5000:$0.2529 2500:$0.2629
IPD135N03LGATMA1 DISTI # 50Y2027	Infineon Technologies AG	MOSFET Transistor, N Channel, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V RoHS Compliant: Yes	1195	1000:$0.2960 500:$0.3210 250:$0.3450 100:$0.3700 50:$0.4370 25:$0.5050 10:$0.5730 1:$0.6870
IPD135N03LGATMA1 DISTI # 726-IPD135N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 30A DPAK-2 RoHS: Compliant	8485	1:$0.6800 10:$0.5670 100:$0.3660 1000:$0.2930 2500:$0.2470 10000:$0.2380 25000:$0.2290
IPD135N03LGATMA1 DISTI # IPD135N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,21A,31W,PG-TO252-3	2500	500:$0.2703 100:$0.2905 25:$0.3345 5:$0.3784 1:$0.5608
IPD135N03LGATMA1 DISTI # 2480822	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3	1835	500:£0.2240 250:£0.2550 100:£0.2860 10:£0.4880 1:£0.6060
IPD135N03LGATMA1 DISTI # 2480822RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	0	1000:$0.4770 500:$0.5960 100:$0.7530 10:$0.9830 1:$1.1200
IPD135N03LGATMA1 DISTI # 2480822	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	1485	1000:$0.4770 500:$0.5960 100:$0.7530 10:$0.9830 1:$1.1200

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Disponibilità

Azione:: Available
Su ordine:: 1991
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Il prezzo attuale di IPD135N03LGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,68 USD~~; ~~0,68 USD~~

10: ~~0,57 USD~~; ~~5,67 USD~~

100: ~~0,37 USD~~; ~~36,60 USD~~

1000: ~~0,29 USD~~; ~~293,00 USD~~

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IPD135N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes