OMO ElectronicOMO Electronic
Expand menu
0 Carrello

PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
Produttore:
Panasonic
Descrizione:
MOSFET MOSFET 600VDC 70mohm X-GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PGA26E07BA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PGA26E07BA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Panasonic
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
GaN
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DFN-8
Numero di canali:
1 Channel
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
26 A
Rds On - Resistenza Drain-Source:
70 mOhms
Qg - Carica cancello:
5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
96 W
Configurazione:
Separare
Nome depositato:
X-GaN
Confezione:
Bobina
Serie:
PGA26E07BA
Marca:
Panasonic
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
200
sottocategoria:
MOSFET
Parte # Alias:
PGA26E07BA2
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
*** International
PANASONIC/ New
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Parte # Mfg. Descrizione Azione Prezzo
PGA26E07BA
DISTI # 667-PGA26E07BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant		29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant		2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant		0
  • 1:$55.0000
Immagine Parte # Descrizione
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR

 Gate Drivers Single Driver
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

 MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

 MOSFET 650V 22A E-Mode GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
LMG3410R070RWHT

Mfr.#: LMG3410R070RWHT

OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

 PWR MGMT MOSFET/PWR DRIVER
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

 MOSFET 650V 22A E-Mode GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

 MOSFET 650V 30A E-Mode GaN
UCC27511ADBVR

Mfr.#: UCC27511ADBVR

OMO.#: OMO-UCC27511ADBVR-TEXAS-INSTRUMENTS

 SINGLE DRIVER
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di PGA26E07BA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
35,43 USD
35,43 USD
10
33,46 USD
334,60 USD
25
31,49 USD
787,25 USD
Iniziare con
Prodotti più recenti
More Newest Products
Top