GS66508T-E02-MR

GS66508T-E02-MR
Mfr. #:
GS66508T-E02-MR
Produttore:
GaN Systems
Descrizione:
MOSFET 650V 30A E-Mode GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS66508T-E02-MR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS66508T-E02-MR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Sistemi GaN
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Tecnologia
GaN
Numero di canali
1 Channel
Configurazione
Separare
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.6 V
Rds-On-Drain-Source-Resistenza
55 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
6.5 nC
Modalità canale
Aumento
Tags
GS66508T, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descrizione Azione Prezzo
GS66508T-E02-MR
DISTI # 499-GS66508T-E02-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
3144
  • 1:$16.2500
  • 10:$15.7300
  • 25:$14.9900
  • 250:$13.9200
GS66508T-E02-MR
DISTI # GS66508T-E02-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
750
  • 250:$12.9800
Immagine Parte # Descrizione
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

Nuovo e originale
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di GS66508T-E02-MR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
19,47 USD
19,47 USD
10
18,50 USD
184,96 USD
100
17,52 USD
1 752,30 USD
500
16,55 USD
8 274,75 USD
1000
15,58 USD
15 576,00 USD
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