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GS66508P-E05-MR

GS66508P-E05-MR
Mfr. #:
GS66508P-E05-MR
Produttore:
GaN Systems
Descrizione:
MOSFET 650V 30A E-Mode GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS66508P-E05-MR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS66508P-E05-MR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Sistemi GaN
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
GaN
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
GaNPX-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
30 A
Rds On - Resistenza Drain-Source:
55 mOhms
Vgs th - Tensione di soglia gate-source:
1.7 V
Vgs - Tensione Gate-Source:
7 V
Qg - Carica cancello:
5.8 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
0.51 mm
Lunghezza:
10 mm
Prodotto:
MOSFET
Serie:
GS6650x
Tipo di transistor:
1 N-Channel
Larghezza:
8.7 mm
Marca:
Sistemi GaN
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Parte # Alias:
GS66508P-E05-MR
Tags
GS66508P, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descrizione Azione Prezzo
GS66508P-E05-MR
DISTI # 499-GS66508P-E05-MR		GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant		0
  • 1:$23.4600
  • 10:$22.7000
  • 25:$21.6500
  • 250:$20.1100
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 Nuovo e originale
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Disponibilità
Azione:
404
Su ordine:
2387
Inserisci la quantità:
Il prezzo attuale di GS66508P-E05-MR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
23,46 USD
23,46 USD
10
22,70 USD
227,00 USD
25
21,65 USD
541,25 USD
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