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GS66502B-E01-MR

GS66502B-E01-MR
Mfr. #:
GS66502B-E01-MR
Produttore:
GaN Systems
Descrizione:
MOSFET 650V Enhancement Mode Transisto
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS66502B-E01-MR Scheda dati
Consegna:
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Pagamento:
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ECAD Model:
Maggiori informazioni:
GS66502B-E01-MR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Sistemi GaN
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Tecnologia
GaN
Numero di canali
1 Channel
Configurazione
Separare
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
10 V
Id-Continuo-Scarico-Corrente
7.5 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.6 V
Rds-On-Drain-Source-Resistenza
560 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
1.7 nC
Modalità canale
Aumento
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS66502B 650V GaN Transistor
GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descrizione Azione Prezzo
GS66502B-E01-MR
DISTI # 499-GS66502B-E01-MR		GaN SystemsMOSFET 650V Enhancement Mode Transistor
RoHS: Compliant		1533
  • 1:$9.3500
  • 10:$9.0500
  • 25:$8.6300
  • 250:$8.0000
  • 1000:$7.7800
GS66502B-E01-MR
DISTI # GS66502B-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		750
  • 250:$7.6900
Immagine Parte # Descrizione
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

 MOSFET 650V Enhancement Mode Transisto
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di GS66502B-E01-MR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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