GS-065-008-1-L

GS-065-008-1-L
Mfr. #:
GS-065-008-1-L
Produttore:
GaN Systems
Descrizione:
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS-065-008-1-L Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS-065-008-1-L maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Sistemi GaN
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
GaN Si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PDFN-6
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
541 mOhms
Vgs th - Tensione di soglia gate-source:
1.4 V
Vgs - Tensione Gate-Source:
- 10 V to 7 V
Qg - Carica cancello:
1.5 nC
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
GS-065
Tipo di transistor:
1 N-Channel
Marca:
Sistemi GaN
Sensibile all'umidità:
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Parte # Alias:
GS-065-008-1-L-E01-MR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
Immagine Parte # Descrizione
LMG1205YFXR

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OMO.#: OMO-LMG1205YFXR

Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
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Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

MOSFET 650V Enhancement Mode Transistor
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

MOSFET 650V 15A E-Mode GaN
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR

Logic Gates Single 2-Input Pos
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Mfr.#: NC7SZ00P5X

OMO.#: OMO-NC7SZ00P5X

Logic Gates UHS 2-Inp NAND Gate
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Mfr.#: DSC1001DI2-006.7800

OMO.#: OMO-DSC1001DI2-006-7800-MICROCHIP-TECHNOLOGY

Oscillator MEMS 6.78MHz ±25ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN SMD Tube
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR-TEXAS-INSTRUMENTS

Logic Gates Single 2-Input Pos
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

MOSFET 650V Enhancement Mode Transisto
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
Disponibilità
Azione:
506
Su ordine:
2489
Inserisci la quantità:
Il prezzo attuale di GS-065-008-1-L è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,79 USD
5,79 USD
10
4,65 USD
46,50 USD
100
4,24 USD
424,00 USD
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