GS66506T-E01-MR

GS66506T-E01-MR
Mfr. #:
GS66506T-E01-MR
Produttore:
GaN Systems
Descrizione:
MOSFET 650V 22A E-Mode GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS66506T-E01-MR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS66506T-E01-MR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Sistemi GaN
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Bobina
Stile di montaggio
SMD/SMT
Tecnologia
GaN
Vgs-Gate-Source-Voltage
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.6 V
Rds-On-Drain-Source-Resistenza
73 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
4.9 nC
Modalità canale
Aumento
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descrizione Azione Prezzo
GS66506T-E01-MR
DISTI # 499-GS66506T-E01-MR
GaN SystemsMOSFET 650V 22A E-Mode GaN
RoHS: Compliant
0
  • 1:$17.1700
  • 10:$13.8500
  • 25:$13.2000
  • 250:$12.2700
GS66506T-E01-MR
DISTI # GS66506T-E01-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$11.7800
Immagine Parte # Descrizione
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di GS66506T-E01-MR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
17,67 USD
17,67 USD
10
16,79 USD
167,86 USD
100
15,90 USD
1 590,30 USD
500
15,02 USD
7 509,75 USD
1000
14,14 USD
14 136,00 USD
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