CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Produttore:
N/A
Descrizione:
RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CGHV96050F2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CGHV96050F2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
CREE
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Confezione
Vassoio
Stile di montaggio
Vite
Intervallo operativo di temperatura
- 40 C to + 150 C
Pacchetto-Custodia
440210
Tecnologia
GaN SiC
Configurazione
Separare
Tipo a transistor
HEMT
Guadagno
10 dB
Classe
-
Potenza di uscita
50 W
Pd-Power-Dissipazione
-
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Applicazione
-
Frequenza operativa
8.4 GHz to 9.6 GHz
Id-Continuo-Scarico-Corrente
6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.3 V
Rds-On-Drain-Source-Resistenza
-
Polarità del transistor
Canale N
Transconduttanza diretta-Min
-
Kit di sviluppo
CGHV96050F2-TB
Vgs-Gate-Source-Breakdown-Voltage
3 V
Gate-Sorgente-Tensione di interruzione
- 10 V to + 2 V
Tensione massima-Drain-Gate
-
Figura di rumore NF
-
P1dB-Punto di compressione
-
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descrizione Azione Prezzo
CGHV96050F2
DISTI # CGHV96050F2-ND
WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray
98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND
WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk
3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2
Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant
5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
2
  • 2:$550.0000
Immagine Parte # Descrizione
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB

RF Development Tools Test Board without GaN HEMT
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB

RF Development Tools Test Board without GaN HEMT
CGHV96050F1-TB

Mfr.#: CGHV96050F1-TB

OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED

BOARD TEST FIXTURE FOR CGHV96050
CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED

TEST FIXTURE FOR CGHV96100F2
CGHV96100F2

Mfr.#: CGHV96100F2

OMO.#: OMO-CGHV96100F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
CGHV96050F2

Mfr.#: CGHV96050F2

OMO.#: OMO-CGHV96050F2-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
CGHV96050F1

Mfr.#: CGHV96050F1

OMO.#: OMO-CGHV96050F1-WOLFSPEED

RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di CGHV96050F2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
688,02 USD
688,02 USD
10
653,62 USD
6 536,19 USD
100
619,22 USD
61 921,80 USD
500
584,82 USD
292 408,50 USD
1000
550,42 USD
550 416,00 USD
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