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CGHV96100F2

CGHV96100F2
Mfr. #:
CGHV96100F2
Produttore:
N/A
Descrizione:
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CGHV96100F2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CGHV96100F2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Qorvo
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
HEMT
Tecnologia:
GaN SiC
Confezione:
Vassoio
Serie:
T2G
Marca:
Qorvo
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor RF JFET
Quantità confezione di fabbrica:
50
sottocategoria:
transistor
Parte # Alias:
1100007
Tags
CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descrizione Azione Prezzo
CGHV96100F2
DISTI # CGHV96100F2-ND		WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray		210In Stock
  • 1:$717.5400
CGHV96100F2-TB
DISTI # CGHV96100F2-TB-ND		WolfspeedTEST FIXTURE FOR CGHV96100F2
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1:$550.0000
CGHV96100F2
DISTI # 941-CGHV96100F2		Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
RoHS: Compliant		98
  • 1:$717.5400
CGHV96100F2-TB
DISTI # 941-CGHV96100F2-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Compliant		0
  • 1:$550.0000
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CGHV96100F2-TB

Mfr.#: CGHV96100F2-TB

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 TEST FIXTURE FOR CGHV96100F2
Disponibilità
Azione:
88
Su ordine:
2071
Inserisci la quantità:
Il prezzo attuale di CGHV96100F2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
583,03 USD
583,03 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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