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CGHV96050F2

CGHV96050F2
Mfr. #:
CGHV96050F2
Produttore:
N/A
Descrizione:
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CGHV96050F2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CGHV96050F2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Qorvo
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tecnologia:
GaN SiC
Vds - Tensione di rottura Drain-Source:
32 V
Vgs - Tensione di rottura gate-source:
100 V
Pd - Dissipazione di potenza:
45 W
Stile di montaggio:
SMD/SMT
Confezione:
Vassoio
Configurazione:
Separare
Altezza:
4.064 mm
Lunghezza:
9.652 mm
Larghezza:
5.842 mm
Marca:
Qorvo
Tensione di interruzione gate-source:
- 2.9 V
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor RF JFET
Quantità confezione di fabbrica:
50
sottocategoria:
transistor
Parte # Alias:
1092444
Tags
CGHV960, CGHV9, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF 100V 9.6GHZ 440210
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Parte # Mfg. Descrizione Azione Prezzo
CGHV96050F2
DISTI # CGHV96050F2-ND		WolfspeedRF MOSFET HEMT 40V 440210
RoHS: Compliant
Min Qty: 1
Container: Tray		98In Stock
  • 1:$458.6800
CGHV96050F2-TB
DISTI # CGHV96050F2-TB-ND		WolfspeedTEST FIXTURE FOR CGHV96050F2
RoHS: Compliant
Min Qty: 1
Container: Bulk		3In Stock
  • 1:$550.0000
CGHV96050F2
DISTI # 941-CGHV96050F2		Cree, Inc.RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
RoHS: Compliant		5
  • 1:$458.6800
CGHV96050F2-TB
DISTI # 941-CGHV96050F2-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		2
  • 1:$550.0000
CGHV96050F2-TB
DISTI # CGHV96050F2-TB		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		2
  • 2:$550.0000
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Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
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Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
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433,77 USD
433,77 USD
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