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SIHB22N60ET5-GE3

SIHB22N60ET5-GE3
Mfr. #:
SIHB22N60ET5-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds E Series D2PAK TO-263
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB22N60ET5-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60ET5-GE3 DatasheetSIHB22N60ET5-GE3 Datasheet (P4-P6)SIHB22N60ET5-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
SIHB22N60ET5-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
21 A
Rds On - Resistenza Drain-Source:
180 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
57 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
227 W
Configurazione:
Separare
Confezione:
Bobina
Serie:
E
Marca:
Vishay / Siliconix
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
27 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
66 ns
Tempo di ritardo di accensione tipico:
18 ns
Unità di peso:
0.077603 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 21A TO263
***ark
N-Channel 600V
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$2.5796
SIHB22N60ET5-GE3
DISTI # SIHB22N60ET5-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHB22N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.7900
  • 4800:$1.8900
  • 1600:$1.9900
  • 3200:$1.9900
  • 800:$2.0900
SIHB22N60ET5-GE3
DISTI # 78-SIHB22N60ET5-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series D2PAK TO-263
RoHS: Compliant		0
  • 800:$2.0800
  • 2400:$1.9700
Immagine Parte # Descrizione
SIHB22N60EF-GE3

Mfr.#: SIHB22N60EF-GE3

OMO.#: OMO-SIHB22N60EF-GE3

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Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3

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SIHB22N60E-E3

Mfr.#: SIHB22N60E-E3

OMO.#: OMO-SIHB22N60E-E3

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Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB22N60ET5-GE3

Mfr.#: SIHB22N60ET5-GE3

OMO.#: OMO-SIHB22N60ET5-GE3

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Mfr.#: SIHB22N65E-GE3

OMO.#: OMO-SIHB22N65E-GE3-VISHAY

 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
SIHB22N60AEL-GE3

Mfr.#: SIHB22N60AEL-GE3

OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

 MOSFET N-CHAN 600V
SIHB22N60E

Mfr.#: SIHB22N60E

OMO.#: OMO-SIHB22N60E-1190

 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Mfr.#: SIHB22N60SE3

OMO.#: OMO-SIHB22N60SE3-1190

 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB22N65E

Mfr.#: SIHB22N65E

OMO.#: OMO-SIHB22N65E-1190

 Trans MOSFET N-CH 650V 22A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N65E)
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di SIHB22N60ET5-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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