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| PartNumber | SIHB22N60E-E3 | SIHB22N60E-GE3 | SIHB22N60E |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 21 A | 21 A | - |
| Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 57 nC | 57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 227 W | 227 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Series | E | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 66 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |