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SIHB22N65E-GE3

SIHB22N65E-GE3
Mfr. #:
SIHB22N65E-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHB22N65E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHB22N65E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 22A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5In Stock
  • 1000:$2.6642
  • 500:$3.1590
  • 100:$3.9012
  • 10:$4.7580
  • 1:$5.3300
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 22A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB22N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.4900
  • 2000:$2.3900
  • 4000:$2.2900
  • 6000:$2.1900
  • 10000:$2.1900
SIHB22N65E-GE3
DISTI # 40X8670		Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 650 V, 0.15 ohm, 10 V RoHS Compliant: Yes1461
  • 1:$4.8500
  • 10:$4.0200
  • 25:$3.7800
  • 50:$3.5500
  • 100:$3.3100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 78-SIHB22N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$4.8500
  • 10:$4.0200
  • 100:$3.3100
  • 250:$3.2100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 2400375		Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
RoHS: Compliant		1461
  • 1:$7.6800
  • 10:$6.3700
  • 100:$5.2400
  • 250:$5.0900
  • 500:$4.5800
SIHB22N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB22N65E-GE3
    DISTI # 2400375    		Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
    RoHS: Compliant    		1461
    • 1:£4.0800
    • 10:£3.0400
    • 100:£2.5000
    • 250:£2.4300
    • 500:£2.1900
    Immagine Parte # Descrizione
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    		 MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60S-E3

    Mfr.#: SIHB22N60S-E3

    OMO.#: OMO-SIHB22N60S-E3-126

    		 IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3-VISHAY

    		 MOSFET N-CH 600V 20A D2PAK
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 21A D2PAK
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di SIHB22N65E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    3,28 USD
    3,28 USD
    10
    3,12 USD
    31,21 USD
    100
    2,96 USD
    295,65 USD
    500
    2,79 USD
    1 396,15 USD
    1000
    2,63 USD
    2 628,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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