PGA26E07BA

PGA26E07BA
Mfr. #:
PGA26E07BA
Produttore:
Panasonic
Descrizione:
MOSFET MOSFET 600VDC 70mohm X-GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PGA26E07BA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PGA26E07BA maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
PGA26E0, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Parte # Mfg. Descrizione Azione Prezzo
PGA26E07BA
DISTI # 667-PGA26E07BA
Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 70mohm X-GaN
RoHS: Compliant
29
  • 1:$35.4300
  • 10:$33.4600
  • 25:$31.4900
PGA26E07BA-SWEVB008
DISTI # 667-PGA26E07BASWEV8
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant
15
  • 1:$400.0000
PGA26E07BA-SWEVB006
DISTI # 667-PGA26E07BASWEVB6
Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 70mOhm X-GaN Chopper EVB
RoHS: Compliant
2
  • 1:$375.0000
PGA26E07BA-DB001
DISTI # 667-PGA26E07BADAB001
Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 70mohm X-GaN
RoHS: Compliant
0
  • 1:$55.0000
Immagine Parte # Descrizione
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

MOSFET MOSFET 600VDC 190mohm X-GaN
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E07-DB001

Mfr.#: PGA26E07-DB001

OMO.#: OMO-PGA26E07-DB001-1190

Nuovo e originale
PGA26E07-SWEVB008

Mfr.#: PGA26E07-SWEVB008

OMO.#: OMO-PGA26E07-SWEVB008-1190

Nuovo e originale
PGA26E07BA

Mfr.#: PGA26E07BA

OMO.#: OMO-PGA26E07BA-1190

MOSFET MOSFET 600VDC 70mohm X-GaN
PGA26E19-DB001

Mfr.#: PGA26E19-DB001

OMO.#: OMO-PGA26E19-DB001-1190

Nuovo e originale
PGA26E19-SWEVB008

Mfr.#: PGA26E19-SWEVB008

OMO.#: OMO-PGA26E19-SWEVB008-1190

Nuovo e originale
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA-1190

MOSFET MOSFET 600VDC 190mohm X-GaN
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di PGA26E07BA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
47,24 USD
47,24 USD
10
44,87 USD
448,73 USD
100
42,51 USD
4 251,15 USD
500
40,15 USD
20 074,90 USD
1000
37,79 USD
37 788,00 USD
Iniziare con
Prodotti più recenti
  • ELJ-QE Series Inductors
    Panasonic's ELJ-QE series laser-cut devices now bring an enhanced level of high frequency performance and high self-resonant frequency to circuits.
  • Light Touch Switch Series
    Panasonic introduces its EVP-BB, EVP-AK, and EVP-AY light touch switch series, featuring laser welded design and withstands typical drop tests.
  • S35 Series Narrow-Pitch Connectors
    Panasonic's introduces the S35 series narrow-pitch connectors. Featuring a tough contact structure, these connectors boast a mated height 0.6 mm x 1.7 mm.
  • ERZ-E14AxxxSx Series Surge Absorbers
    Panasonic's 14 mm radial-leaded disc ZNR® transient/surge absorbers feature the same outstanding performance and lead spacing as its 20 mm counterparts.
  • ETQ-P3W Series Line Extension
    Panasonic expands the ETQ-P3W series to nine part numbers with an overall inductance range of 0.33 μH to 4.7 μH.
Top