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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
Produttore:
Panasonic
Descrizione:
MOSFET MOSFET 600VDC 190mohm X-GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PGA26E19BA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PGA26E19BA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Panasonic
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
GaN
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DFN-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
13 A
Rds On - Resistenza Drain-Source:
190 mOhms
Vgs th - Tensione di soglia gate-source:
1.2 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
2 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
69 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
X-GaN
Serie:
PGA26E19BA
Marca:
Panasonic
Tempo di caduta:
2.4 ns
Sensibile all'umidità:
sì
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
5.2 ns
Quantità confezione di fabbrica:
2000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
3.4 ns
Tempo di ritardo di accensione tipico:
3.4 ns
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Power Field-Effect Transistor,
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
Parte # Mfg. Descrizione Azione Prezzo
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
Immagine Parte # Descrizione
SN6505BDBVR

Mfr.#: SN6505BDBVR

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 Power Management Specialized - PMIC Transformer driver for isolated power
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

 MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

 MOSFET 650V 15A E-Mode GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D-WOLFSPEED

 MOSFET N-CH 1200V 19A TO-247
Disponibilità
Azione:
309
Su ordine:
2292
Inserisci la quantità:
Il prezzo attuale di PGA26E19BA è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
18,29 USD
18,29 USD
10
17,07 USD
170,70 USD
25
16,21 USD
405,25 USD
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