 | | |
| PartNumber | ZXMD65P03N8TA | ZXMD65P02N8TA |
| Description | MOSFET Dl 30V P-Chnl HDMOS | MOSFET Dl 20V P-Chnl HDMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | N | T |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V |
| Id Continuous Drain Current | 4.8 A | 5.1 A |
| Rds On Drain Source Resistance | 55 mOhms | 80 mOhms |
| Vgs Gate Source Voltage | 20 V | 12 V |
| Pd Power Dissipation | 2 W | 1.25 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.5 mm | - |
| Length | 5 mm | - |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Width | 4 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 26.2 ns | 29.9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6.4 ns | 29.9 ns |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 49.5 ns | 57.9 ns |
| Typical Turn On Delay Time | 3.8 ns | 6.6 ns |
| Unit Weight | 0.002610 oz | 0.002610 oz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Product | - | MOSFET Small Signal |
| Type | - | MOSFET |
| Factory Pack Quantity | - | 500 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMD65P03N8TA | MOSFET Dl 30V P-Chnl HDMOS | |
| ZXMD65P02N8TA | MOSFET Dl 20V P-Chnl HDMOS | ||
| ZXMD65P02N8TA | MOSFET 2P-CH 20V 4A 8-SOIC | ||
| ZXMD65P03N8TA | MOSFET 2P-CH 30V 3.8A 8-SOIC | ||
| ZXMD65P02 | Nuovo e originale | ||
| ZXMD65P03N8 | Nuovo e originale | ||
| ZXMD65P02N8 | Nuovo e originale | ||
| ZXMD65P03 | Nuovo e originale | ||
| ZXMD65P02N8TC | MOSFET 2P-CH 20V 4A 8SOIC | ||
| ZXMD65P03N8TC | Nuovo e originale |