| PartNumber | TGF2023-2-02 | TGF2023-2-01 | TGF2023-2-05 |
| Description | RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB | RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB | RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB |
| Manufacturer | Qorvo | Qorvo | Qorvo |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | GaN |
| Transistor Polarity | N-Channel | N-Channel | - |
| Package / Case | Die | Die | DFN-6 |
| Packaging | Gel Pack | Gel Pack | Reel |
| Product | RF JFET | RF JFET | - |
| Series | TGF | TGF | QPD |
| Type | GaN SiC HEMT | GaN SiC HEMT | - |
| Brand | Qorvo | Qorvo | Qorvo |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 100 | 50 | 250 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 1099622 | 1099624 | 1131037 |
| Gain | - | - | 16.2 dB |
| Vds Drain Source Breakdown Voltage | - | - | - |
| Vgs Gate Source Breakdown Voltage | - | - | - |
| Id Continuous Drain Current | - | - | - |
| Output Power | - | - | 90 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - | - | - 40 C |
| Maximum Operating Temperature | - | - | - |
| Pd Power Dissipation | - | - | - |
| Mounting Style | - | - | SMD/SMT |
| Application | - | - | Microcell Base Station, W-CDMA / LTE |
| Configuration | - | - | Single |
| Operating Frequency | - | - | 1.8 GHz to 3.8 GHz |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | QPD0060PCB4B01 |