TGF2023-2-01

TGF2023-2-01
Mfr. #:
TGF2023-2-01
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TGF2023-2-01 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TGF2023-2-01 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
TGF
Confezione
Confezione di gel
Alias ​​parziali
1099624
Pacchetto-Custodia
MORIRE
Tecnologia
GaN SiC
Tipo a transistor
HEMT
Polarità del transistor
Canale N
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF POWER TRANSISTOR
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
TGF2023-2-01
DISTI # 772-TGF2023-2-01
QorvoRF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
Immagine Parte # Descrizione
TGF2021-12

Mfr.#: TGF2021-12

OMO.#: OMO-TGF2021-12-318

RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)
TGF2025

Mfr.#: TGF2025

OMO.#: OMO-TGF2025-318

RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
TGF2022-06

Mfr.#: TGF2022-06

OMO.#: OMO-TGF2022-06-318

RF JFET Transistors DC-20GHz 0.6mm Pwr pHEMT (0.35um)
TGF2022-60

Mfr.#: TGF2022-60

OMO.#: OMO-TGF2022-60-318

RF JFET Transistors DC-20GHz 6.0mm Pwr pHEMT (0.35um)
TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SG

Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2021-04SD

Mfr.#: TGF2021-04SD

OMO.#: OMO-TGF2021-04SD-1190

Nuovo e originale
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di TGF2023-2-01 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
36,93 USD
36,93 USD
10
35,08 USD
350,84 USD
100
33,24 USD
3 323,70 USD
500
31,39 USD
15 695,25 USD
1000
29,54 USD
29 544,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Top