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TGF2023-2-20

TGF2023-2-20
Mfr. #:
TGF2023-2-20
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TGF2023-2-20 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TGF2023-2-20 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Qorvo
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
HEMT
Tecnologia:
GaN SiC
Guadagno:
21 dB
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
50 V
Vgs - Tensione di rottura gate-source:
145 V
Id - Corrente di scarico continua:
1.46 A
Potenza di uscita:
8.7 W
Tensione massima della porta di drenaggio:
55 V
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Pd - Dissipazione di potenza:
13 W
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SMD-8
Confezione:
Bobina
Frequenza operativa:
30 MHz to 1200 MHz
Serie:
QPD1011
Marca:
Qorvo
Transconduttanza diretta - Min:
-
Kit di sviluppo:
QPD1011EVB01
Sensibile all'umidità:
sì
Tipologia di prodotto:
Transistor RF JFET
Quantità confezione di fabbrica:
100
sottocategoria:
transistor
Parte # Alias:
QPD1011
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 90 W, 11.1 dB, 28 V, GaN
***S
new, original packaged
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
TGF2023-2-20
DISTI # 772-TGF2023-2-20		QorvoRF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
RoHS: Compliant		0
  • 50:$147.8300
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Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di TGF2023-2-20 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
50
147,83 USD
7 391,50 USD
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