TC58

TC58BYG0S3HBAI6 vs TC58BYG0S3HBAI4 vs TC58BVG2S0HTAI0

 
PartNumberTC58BYG0S3HBAI6TC58BYG0S3HBAI4TC58BVG2S0HTAI0
DescriptionNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseVFBGA-67TFBGA-63TSOP-48
Memory Size1 Gbit1 Gbit4 Gbit
Interface TypeParallelParallelParallel
Organization128 M x 8128 M x 8512 M x 8
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min1.7 V1.7 V2.7 V
Supply Voltage Max1.95 V1.95 V3.6 V
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
BrandToshiba MemoryToshiba MemoryToshiba Memory
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity33821096
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Timing Type-Synchronous-
Supply Current Max-30 mA30 mA
Product-NAND Flash-
Speed-25 ns-
Architecture-Block Erase-
Maximum Clock Frequency---
Produttore Parte # Descrizione RFQ
Toshiba Memory
Toshiba Memory
TC58BYG2S0HBAI4 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TC58CVG1S3HRAIG NAND Flash 3.3V 2Gb 24nm Serial NAND
TC58CVG0S3HRAIG NAND Flash 3.3V 1Gb 24nm Serial NAND
TC58BYG1S3HBAI6 NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
TC58BYG0S3HBAI6 NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58BYG0S3HBAI4 NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58BYG1S3HBAI4 NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
TC58BVG2S0HTAI0 NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
TC58BYG2S0HBAI6 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TC58BVG2S0HTA00B4H EEPROM Serial 4G-bit 512M x 8 3.3V 48-Pin TSOP-I (Alt: TC58BVG2S0HTA00B4H)
TC58BVG2S3HTA00 Nuovo e originale
TC58BVG2SOFTA00 Nuovo e originale
TC58BVGOS3H Nuovo e originale
TC58BVGOS3HTA00 Nuovo e originale
TC58BVM92A5BAJ Nuovo e originale
TC58BYG0S3HAI6 Nuovo e originale
TC58BYG0S3HBAI4(JAH) Nuovo e originale
TC58BYG0S8EBAIA Nuovo e originale
TC58C1286AXB Nuovo e originale
TC58C1286AXG Nuovo e originale
TC58C1287AXB Nuovo e originale
TC58C128AFTI Nuovo e originale
TC58C256AFT Nuovo e originale
TC58C256AFTI Nuovo e originale
TC58C256AXB Nuovo e originale
TC58CV65FT Nuovo e originale
TC58CVG0S3HRAIG SLC NAND with SPI Interface
TC58CVG0S3HRAIGBAH Nuovo e originale
TC58CVG1S3HQAIE 2Gbit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TC58CVG1S3HQAIE)
TC58CVG1S3HRAIG SLC NAND with SPI Interface
TC58BYG1S3HBAI6 IC FLASH 2G PARALLEL 67VFBGA Benand
TC58BYG2S0HBAI6 IC FLASH 4G PARALLEL 67VFBGA Benand
TC58BVG2S0HTA00 EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
TC58BVG2S0HTAI0 EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
TC58BYG0S3HBAI6 IC FLASH 1G PARALLEL 67VFBGA Benand
TC58BYG1S3HBAI4 2GB SLC NAND BGA 24NM I TEMP (EE Benand
TC58BYG0S3HBAI4 1GB SLC NAND BGA 24NM I TEMP (EE Benand
TC58BYG1S3HBAI4_REEL SLC NAND Flash Serial 1.8V 2Gbit 256M x 8Bit 63-Pin TFBGA (Alt: TC58BYG1S3HBAI4)
TC58BVG2S0HTA00-ND Nuovo e originale
TC58BVG2S0HTAI0-ND Nuovo e originale
TC58BYG0S3HBAI4-ND Nuovo e originale
TC58BYG0S3HBAI6-ND Nuovo e originale
TC58BYG1S3HBAI4-ND Nuovo e originale
TC58BYG1S3HBAI6-ND Nuovo e originale
TC58BYG2S0HBAI4 4GB SLC BENAND 24NM BGA 9X11 (EE Benand
TC58BYG2S0HBAI4-ND Nuovo e originale
TC58BYG2S0HBAI6-ND Nuovo e originale
TC58CVG0S3HQAIE-ND Nuovo e originale
TC58CVG0S3HRAIG-ND Nuovo e originale
TC58CVG1S3HRAIG-ND Nuovo e originale
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