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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| TC58BVG2S0HTAI0 DISTI # V99:2348_18854223 | Toshiba America Electronic Components | SLC NAND Flash 3.3V 4G-bit 48-Pin TSOP | 17 |
|
| TC58BVG2S0HTAI0 DISTI # V36:1790_18854223 | Toshiba America Electronic Components | SLC NAND Flash 3.3V 4G-bit 48-Pin TSOP | 0 |
|
| TC58BVG2S0HTAI0 DISTI # TC58BVG2S0HTAI0-ND | Toshiba Semiconductor and Storage Products | IC FLASH 4G PARALLEL 48TSOP I RoHS: Compliant Min Qty: 1 Container: Tray | 65In Stock |
|
| TC58BVG2S0HTAI0_TRAY DISTI # TC58BVG2S0HTAI0_TRAY | Toshiba America Electronic Components | NAND Flash Memory (Alt: TC58BVG2S0HTAI0_TRAY) RoHS: Compliant Min Qty: 1 | Europe - 16 |
|
| TC58BVG2S0HTAI0 DISTI # TC58BVG2S0HTAI0 | Toshiba America Electronic Components | 4Gbit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V - Trays (Alt: TC58BVG2S0HTAI0) RoHS: Compliant Min Qty: 96 Container: Tray | Americas - 0 |
|
| TC58BVG2S0HTAI0 DISTI # 757-TC58BVG2S0HTAI0 | Toshiba America Electronic Components | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant | 62 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: TC58BVG2S0HBAI4 OMO.#: OMO-TC58BVG2S0HBAI4 |
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) |
|
Mfr.#: TC58BVG2S0HTA00 OMO.#: OMO-TC58BVG2S0HTA00 |
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) |
|
|
Mfr.#: TC58BVG2S0HTAI0 OMO.#: OMO-TC58BVG2S0HTAI0 |
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) |
|
Mfr.#: TC58BVG2S0FTA00 OMO.#: OMO-TC58BVG2S0FTA00-1190 |
4GB SLC NAND TSOP 32NM (EEPROM) - Trays (Alt: TC58BVG2S0FTA00) |
|
|
Mfr.#: TC58BVG2S0HTA00B4H OMO.#: OMO-TC58BVG2S0HTA00B4H-231 |
EEPROM Serial 4G-bit 512M x 8 3.3V 48-Pin TSOP-I (Alt: TC58BVG2S0HTA00B4H) |
|
|
Mfr.#: TC58BVG2S3HTA00 OMO.#: OMO-TC58BVG2S3HTA00-1190 |
Nuovo e originale |
|
|
Mfr.#: TC58BVG2SOFTA00 OMO.#: OMO-TC58BVG2SOFTA00-1190 |
Nuovo e originale |
|
Mfr.#: TC58BVG2S0HTA00 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM |
|
Mfr.#: TC58BVG2S0HBAI4 |
IC FLASH 4G PARALLEL 63TFBGA Benand |
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Mfr.#: TC58BVG2S0HTAI0 |
EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM |