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TC58BYG2S0HBAI6

TC58BYG2S0HBAI6
Mfr. #:
TC58BYG2S0HBAI6
Produttore:
Toshiba Memory
Descrizione:
NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
TC58BYG2S0HBAI6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
TC58BYG2S0HBAI6 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
NAND Flash
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
VFBGA-67
Dimensione della memoria:
4 Gbit
Tipo di interfaccia:
Parallelo
Organizzazione:
512 M x 8
Larghezza bus dati:
8 bit
Tensione di alimentazione - Min:
1.7 V
Tensione di alimentazione - Max:
1.95 V
Corrente di alimentazione - Max:
30 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Confezione:
Vassoio
Tipo di memoria:
NAND
Marca:
Memoria Toshiba
Frequenza massima di clock:
-
Sensibile all'umidità:
sì
Tipologia di prodotto:
NAND Flash
Quantità confezione di fabbrica:
338
sottocategoria:
Memoria e archiviazione dati
Tags
TC58BYG2, TC58BY, TC58B, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA
***et
4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V
***or
IC FLASH 4GBIT PARALLEL 67VFBGA
***ical
SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 Tray
***enic
BGA-67(8x6.5) NAND FLASH ROHS
***i-Key
IC FLASH 1GBIT PARALLEL 67BGA
***ca Corp
Flash, 128MX8, PBGA67
***pmh
FLASH, 256MX8, PDSO48
***et
4-BIT ECC X8 I/O AND 1.8V VCC SPANSION
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***-Wing Technology
Discontinued 2016 BOTTOM Non-Volatile FLASH Memory -40C~85C TA 1.7V 2147483648bit 6.5mm
***ark
TRAY PKGED / 2GB, 4-BIT ECC, X8 I/O AND 1.8V VCC SPANSIONA(R) SLC NAND FLASH MEMORY IN BGA 67-BALL
***ical
SLC NAND Flash Parallel 1.8V 2G-bit 256M x 8 Tray
***pmh
71V124 - 3.3V STATIC RAM 1 MEG (
***et
2GB, 4-BIT ECC, X8 I/O AND 1.8
***ark
TRAY PKGED / 4-BIT ECC, X8 I/O AND 3V VCC SPANSIONA(R) SLC NAND FLASH MEMORY, BGA
***ical
SLC NAND Flash Parallel 3V/3.3V 1G-bit 64M x 16 67-Pin BGA Tray
***pmh
NOR FLASH SERIAL-SPI 3V/3.3V 32M
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Parte # Mfg. Descrizione Azione Prezzo
TC58BYG2S0HBAI6
DISTI # V99:2348_18853859		Toshiba America Electronic ComponentsNAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA54
  • 2500:$3.2800
  • 1000:$3.3730
  • 500:$3.5060
  • 250:$3.6570
  • 100:$3.7020
  • 50:$4.0780
  • 10:$4.1460
  • 1:$4.5210
TC58BYG2S0HBAI6
DISTI # TC58BYG2S0HBAI6-ND		Toshiba Semiconductor and Storage ProductsIC FLASH 4G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		188In Stock
  • 1014:$3.6619
  • 676:$3.8246
  • 338:$4.0793
  • 100:$4.0950
  • 50:$4.5648
  • 25:$4.5964
  • 10:$4.6860
  • 1:$5.1300
TC58BYG2S0HBAI6
DISTI # TC58BYG2S0HBAI6		Toshiba America Electronic Components4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG2S0HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray		Americas - 0
  • 338:$3.8900
  • 676:$3.7900
  • 1352:$3.6900
  • 2028:$3.6900
  • 3380:$3.5900
TC58BYG2S0HBAI6
DISTI # 757-TC58BYG2S0HBAI6		Toshiba America Electronic ComponentsNAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant		385
  • 1:$4.9000
  • 10:$4.4700
  • 50:$4.3500
  • 100:$3.9100
  • 250:$3.8900
  • 500:$3.6500
  • 1000:$3.4900
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Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di TC58BYG2S0HBAI6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,59 USD
4,59 USD
10
4,16 USD
41,60 USD
25
4,07 USD
101,75 USD
50
4,05 USD
202,50 USD
100
3,63 USD
363,00 USD
250
3,62 USD
905,00 USD
500
3,48 USD
1 740,00 USD
1000
3,31 USD
3 310,00 USD
2500
3,16 USD
7 900,00 USD
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