PartNumber | SIHG30N60E-E3 | SIHG30N60E-GE3 | SIHG30N60AEL-GE3 |
Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 29 A | 29 A | 28 A |
Rds On Drain Source Resistance | 125 mOhms | 125 mOhms | 120 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 85 nC | 85 nC | 120 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 250 W | 250 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | - |
Series | E | E | EL |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 36 ns | 36 ns | 33 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 32 ns | 32 ns | 24 ns |
Factory Pack Quantity | 500 | 500 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 63 ns | 63 ns | 79 ns |
Typical Turn On Delay Time | 19 ns | 19 ns | 26 ns |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
Forward Transconductance Min | - | - | 19 S |