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SIHG30N60E-GE3

SIHG30N60E-GE3
Mfr. #:
SIHG30N60E-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 600V 29A TO247AC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHG30N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHG30N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHG30N60E-GE3
DISTI # V99:2348_09219139		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2500:$3.1150
  • 1000:$3.2160
  • 500:$3.6500
  • 250:$4.2360
  • 100:$4.3740
  • 10:$5.3010
  • 1:$6.9872
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		453In Stock
  • 2500:$3.2119
  • 500:$4.0089
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHG30N60E-GE3
DISTI # 25872836		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		389
  • 2:$6.9872
SIHG30N60E-GE3
DISTI # 26884875		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		178
  • 19:$4.1692
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC (Alt: SIHG30N60E-GE3)
RoHS: Compliant
Min Qty: 500		Asia - 2500
  • 1000:$0.6737
  • 500:$0.7219
SIHG30N60E-GE3
DISTI # SIHG30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG30N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 68W7051)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$4.8000
  • 100:$5.5000
  • 50:$5.8900
  • 25:$6.2900
  • 10:$6.6800
  • 1:$8.0600
SIHG30N60E-GE3
DISTI # 68W7051		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 29A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes178
  • 1:$2.7100
  • 10:$2.7100
  • 25:$2.7100
  • 50:$2.7100
  • 100:$2.7100
  • 500:$2.7100
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		49
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-GE3
DISTI # 7879421P		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, RL419
  • 5:£1.9800
SIHG30N60E-GE3
DISTI # 7879421		Vishay IntertechnologiesMOSFET N-CH 600V 29A LOW FOM TO247AC, EA28
  • 5:£1.9800
  • 1:£2.0300
SIHG30N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-247
      RoHS: Compliant      		52
      • 2500:$4.8600
      • 500:$6.0500
      • 100:$7.1000
      • 25:$8.1900
      • 10:$8.6700
      • 1:$9.6400
      SIHG30N60E-GE3
      DISTI # 2364082      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 29A, TO-2475925
      • 500:£3.0300
      • 250:£3.2700
      • 100:£3.3800
      • 10:£4.1000
      • 1:£5.4600
      Immagine Parte # Descrizione
      SIHG30N60E-E3

      Mfr.#: SIHG30N60E-E3

      OMO.#: OMO-SIHG30N60E-E3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG30N60E-GE3

      Mfr.#: SIHG30N60E-GE3

      OMO.#: OMO-SIHG30N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG30N60AEL-GE3

      Mfr.#: SIHG30N60AEL-GE3

      OMO.#: OMO-SIHG30N60AEL-GE3

      		 MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
      SIHG30N60E-E3

      Mfr.#: SIHG30N60E-E3

      OMO.#: OMO-SIHG30N60E-E3-VISHAY

      		 RF Bipolar Transistors MOSFET N-Channel 600V
      SIHG30N60AEL-GE3

      Mfr.#: SIHG30N60AEL-GE3

      OMO.#: OMO-SIHG30N60AEL-GE3-VISHAY

      		 MOSFET N-CHAN 600V TO-247AC
      SIHG30N60E

      Mfr.#: SIHG30N60E

      OMO.#: OMO-SIHG30N60E-1190

      		 Nuovo e originale
      SIHG30N60E-GE3

      Mfr.#: SIHG30N60E-GE3

      OMO.#: OMO-SIHG30N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 29A TO247AC
      SIHG30N60EGE3

      Mfr.#: SIHG30N60EGE3

      OMO.#: OMO-SIHG30N60EGE3-1190

      		 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di SIHG30N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      4,42 USD
      4,42 USD
      10
      4,20 USD
      41,98 USD
      100
      3,98 USD
      397,71 USD
      500
      3,76 USD
      1 878,10 USD
      1000
      3,54 USD
      3 535,20 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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