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SIHG30N60E-E3

SIHG30N60E-E3
Mfr. #:
SIHG30N60E-E3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET N-Channel 600V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHG30N60E-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHG30N60E-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
***o-Tech
MOSFET N-Channel 600V 29A TO247AC
***nell
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHG30N60E-E3
DISTI # SIHG30N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
Min Qty: 1
Container: Tube		499In Stock
  • 100:$4.4850
  • 25:$5.1752
  • 10:$5.4740
  • 1:$6.1000
SIHG30N60E-E3
DISTI # SIHG30N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		25
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-E3Vishay Intertechnologies 100
    Immagine Parte # Descrizione
    SIHG30N60E-E3

    Mfr.#: SIHG30N60E-E3

    OMO.#: OMO-SIHG30N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG30N60E-GE3

    Mfr.#: SIHG30N60E-GE3

    OMO.#: OMO-SIHG30N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG30N60AEL-GE3

    Mfr.#: SIHG30N60AEL-GE3

    OMO.#: OMO-SIHG30N60AEL-GE3

    		 MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
    SIHG30N60E-E3

    Mfr.#: SIHG30N60E-E3

    OMO.#: OMO-SIHG30N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET N-Channel 600V
    SIHG30N60AEL-GE3

    Mfr.#: SIHG30N60AEL-GE3

    OMO.#: OMO-SIHG30N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V TO-247AC
    SIHG30N60E

    Mfr.#: SIHG30N60E

    OMO.#: OMO-SIHG30N60E-1190

    		 Nuovo e originale
    SIHG30N60E-GE3

    Mfr.#: SIHG30N60E-GE3

    OMO.#: OMO-SIHG30N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 29A TO247AC
    SIHG30N60EGE3

    Mfr.#: SIHG30N60EGE3

    OMO.#: OMO-SIHG30N60EGE3-1190

    		 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di SIHG30N60E-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    4,34 USD
    4,34 USD
    10
    4,12 USD
    41,18 USD
    100
    3,90 USD
    390,15 USD
    500
    3,68 USD
    1 842,40 USD
    1000
    3,47 USD
    3 468,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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