| PartNumber | SI7192DP-T1-GE3 | SI7190DP-T1-GE3 | Si7190ADP-T1-RE3 |
| Description | MOSFET 30V 60A 104W 1.9mohm @ 10V | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | SI7 | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI7192DP-GE3 | SI7190DP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Id Continuous Drain Current | - | - | 14.4 A |
| Rds On Drain Source Resistance | - | - | 102 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 22.4 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 56.8 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Forward Transconductance Min | - | - | 11 S |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 5 ns |
| Typical Turn Off Delay Time | - | - | 23 ns |
| Typical Turn On Delay Time | - | - | 13 ns |