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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI7190DP-T1-GE3 DISTI # V72:2272_07432385 | Vishay Intertechnologies | Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R | 2914 |
|
| SI7190DP-T1-GE3 DISTI # V36:1790_07432385 | Vishay Intertechnologies | Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R | 0 |
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| SI7190DP-T1-GE3 DISTI # SI7190DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 250V 18.4A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 7246In Stock |
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| SI7190DP-T1-GE3 DISTI # SI7190DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 250V 18.4A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 7246In Stock |
|
| SI7190DP-T1-GE3 DISTI # SI7190DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 250V 18.4A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | 6000In Stock |
|
| SI7190DP-T1-GE3 DISTI # 31606016 | Vishay Intertechnologies | Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R | 2914 |
|
| SI7190DP-T1-GE3 DISTI # SI7190DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R (Alt: SI7190DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Asia - 5 |
|
| SI7190DP-T1-GE3 DISTI # SI7190DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 250V 4.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7190DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7190DP-T1-GE3. DISTI # 15AC0303 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:18.4A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:96W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
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| SI7190DP-T1-GE3 DISTI # 781-SI7190DP-GE3 | Vishay Intertechnologies | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 3940 |
|
| SI7190DP-T1-GE3 | Vishay Intertechnologies | MOSFET 250V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | Americas - | |
| SI7190DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SI7190DP-T1-GE3 DISTI # XSKDRABV0052933 | Vishay Intertechnologies | RoHS: Compliant | 9000 in Stock0 on Order |
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| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: SI7196DP-T1-GE3 OMO.#: OMO-SI7196DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIRA18DP-T1-GE3 |
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Mfr.#: SI7196DP-T1-E3 OMO.#: OMO-SI7196DP-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 30V 16A 41.6W |
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Mfr.#: SI7196DP-T1-GE3 OMO.#: OMO-SI7196DP-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 16A 41.6W 1.1mohm @ 10V |
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Mfr.#: SI7196DP OMO.#: OMO-SI7196DP-1190 |
Nuovo e originale |
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Mfr.#: SI7196DP-T1-EG3 OMO.#: OMO-SI7196DP-T1-EG3-1190 |
Nuovo e originale |