NTGD31

NTGD3148NT1G vs NTGD3147FT1G vs NTGD3133PT1G

 
PartNumberNTGD3148NT1GNTGD3147FT1GNTGD3133PT1G
DescriptionMOSFET NFET 20V 3A 70MOHM TSOP6MOSFET FETKY 20V 2.5A 145M TSOP6MOSFET 2P-CH 20V 1.6A 6TSOP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels2 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.5 A2.2 A-
Rds On Drain Source Resistance70 mOhms, 70 mOhms145 mOhms-
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V12 V-
Qg Gate Charge3.8 nC, 3.8 nC--
Minimum Operating Temperature- 50 C- 25 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.94 mm0.94 mm-
Length3 mm3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type2 N-Channel1 P-Channel-
TypePower Trench MOSFET--
Width1.5 mm1.5 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min6.2 S, 6.2 S--
Fall Time1.6 ns, 1.6 ns6.2 ns-
Product TypeMOSFETMOSFET-
Rise Time11.2 ns, 11.2 ns6.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12.8 ns, 12.8 ns14.5 ns-
Typical Turn On Delay Time7.4 ns, 7.4 ns7.5 ns-
Unit Weight0.000705 oz0.000705 oz-
Produttore Parte # Descrizione RFQ
ON Semiconductor
ON Semiconductor
NTGD3148NT1G MOSFET NFET 20V 3A 70MOHM TSOP6
NTGD3149CT1G MOSFET COMP TSOP6 20V 3A TR
NTGD3147FT1G MOSFET FETKY 20V 2.5A 145M TSOP6
NTGD3133PT1G MOSFET 2P-CH 20V 1.6A 6TSOP
NTGD3147FT1G MOSFET P-CH 20V 2.2A 6-TSOP
NTGD3148NT1G MOSFET 2N-CH 20V 3A 6TSOP
NTGD3149CT1G MOSFET N/P-CH 20V 6-TSOP
NTGD3122C Nuovo e originale
NTGD3122CT1G Nuovo e originale
NTGD3148N Nuovo e originale
NTGD314PCT1G Nuovo e originale
NTGD3133PT1H PFET TSOP6 20V 2.3A 145MO
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